MT48H8M16LFB4-75:J TR Micron Technology Inc, MT48H8M16LFB4-75:J TR Datasheet - Page 15

• Manufacturer Part Number: MT48H8M16LFB4-75:J TR
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M16LFB4-75:J TR

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 70mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Table 7:
Table 8:
PDF: 09005aef832ff1ea/Source: 09005aef832ff1ac
128mb_mobile_sdram_y35m__2.fm - Rev. E 4/09 EN
Parameter/Condition
Parameter/Condition
Operating current:
Active mode; burst = 1; READ or WRITE;
Standby current:
Power-down mode; All banks idle; CKE = LOW
Standby current:
Nonpower-down mode; All banks idle; CKE = HIGH
Standby current:
Active mode; CKE = LOW; CS# = HIGH; All banks active;
No accesses in progress
Standby current:
Active mode; CKE = HIGH; CS# = HIGH; All banks active after
met; No accesses in progress
Operating current:
Burst mode; READ or WRITE; All banks active; Half of DQ toggling
every cycle
Auto refresh current:
CKE = HIGH; CS# = HIGH
Deep power-down
Operating current:
Active mode; burst = 1; READ or WRITE;
Standby current:
Power-down mode; All banks idle; CKE = LOW
Standby current:
Nonpower-down mode; All banks idle; CKE = HIGH
Standby current:
Active mode; CKE = LOW; CS# = HIGH; All banks active;
No accesses in progress
Standby current:
Active mode; CKE = HIGH; CS# = HIGH; All banks active after
met; No accesses in progress
Operating current:
Burst mode; READ or WRITE; All banks active; Half of DQ toggling
every cycle
Auto refresh current:
CKE = HIGH; CS# = HIGH
Deep power-down
Idd Specifications and Conditions (x16)
Note 1 applies to all parameters and conditions; notes appear on page 16; Vdd/Vddq = 1.70–1.95V
Idd Specifications and Conditions (x32)
Note 1 applies to all parameters; notes appear on page 16; Vdd/Vddq = 1.70–1.95V
t
t
RC =
RC =
t
t
t
t
t
t
RFC =
RFC = 7.8125µs
RC (MIN)
RFC =
RFC = 7.8125µs
RC (MIN)
t
t
RFC (MIN)
RFC (MIN)
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
15
t
t
RCD
RCD
Symbol
Symbol
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Idd2N
Idd3N
Idd2N
Idd3N
Idd2P
Idd3P
Idd2P
Idd3P
Idd1
Idd4
Idd5
Idd6
Idd1
Idd4
Idd5
Idd6
Izz
Izz
200
200
100
50
15
20
80
90
10
70
15
20
90
10
-6
-6
3
5
3
5
Max
Max
Electrical Specifications
200
200
-75
-75
©2008 Micron Technology, Inc. All rights reserved.
40
12
15
70
85
10
55
12
15
90
85
10
3
3
3
3
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
2, 3, 4, 6
2, 3, 4, 7
2, 3, 4, 6
2, 3, 4, 7
Notes
Notes
2, 3, 4
3, 4, 6
3, 4, 6
2, 3, 4
2, 3, 4
3, 4, 6
3, 4, 6
2, 3, 4
5, 8
5, 8
5
5