MT48H8M16LFB4-75:J TR Micron Technology Inc, MT48H8M16LFB4-75:J TR Datasheet - Page 47

• Manufacturer Part Number: MT48H8M16LFB4-75:J TR
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M16LFB4-75:J TR

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 70mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 23:
PDF: 09005aef832ff1ea/Source: 09005aef832ff1ac
sdr_mobile_sdram_cmd_op_timing_dia_fr10_08__3.fm - Rev. E 4/09 EN
Terminating a READ Burst
Notes:
Continuous-page READ bursts can be truncated with a BURST TERMINATE command
and fixed-length READ bursts can be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated. The BURST TERMINATE command
should be issued x cycles before the clock edge at which the last desired data element is
valid, where x = CL - 1. This is shown in Figure 23 for each possible CL; data element
n + 3 is the last desired data element of a longer burst.
1. DQM is LOW.
Command
Command
Address
Address
CLK
CLK
DQ
DQ
T0
Bank,
Col n
T0
READ
Bank,
READ
Col n
CL = 2
CL = 3
T1
T1
NOP
NOP
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
47
T2
T2
NOP
NOP
Dout
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3
T3
NOP
NOP
Dout
n + 1
Dout
n
TERMINATE
TERMINATE
BURST
BURST
T4
T4
X = 1 cycle
Dout
n + 2
Dout
n + 1
Transitioning data
X = 2 cycles
T5
T5
NOP
NOP
Dout
n + 3
Dout
n + 2
©2008 Micron Technology, Inc. All rights reserved.
T6
T6
Timing Diagrams
NOP
NOP
Dout
n + 3
Don’t Care
T7
NOP