MT48H8M16LFB4-75:J TR Micron Technology Inc, MT48H8M16LFB4-75:J TR Datasheet - Page 66

• Manufacturer Part Number: MT48H8M16LFB4-75:J TR
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M16LFB4-75:J TR

• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 70mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 45:
PDF: 09005aef832ff1ea/Source: 09005aef832ff1ac
sdr_mobile_sdram_cmd_op_timing_dia_fr10_08__3.fm - Rev. E 4/09 EN
Command
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CKS
t CMS
t AS
t AS
t AS
ACTIVE
Bank
Row
Row
T0
WRITE Without Auto Precharge
t CKH
t CMH
t AH
t AH
t AH
t RCD
t RAS
t RC
Notes:
t CK
T1
NOP
1. For this example, BL = 4 and the WRITE burst is followed by a manual PRECHARGE.
Disable auto precharge
t CMS
t CL
Column m
t DS
Din m
WRITE
Bank
T2
t CMH
t DH
t CH
t DS
Din m + 1
T3
NOP
t DH
t DS
Din m + 2
T4
NOP
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
t DH
66
t DS
Din m + 3
NOP
T5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DH
t WR
NOP
T6
PRECHARGE
Single bank
All banks
Bank
T7
©2008 Micron Technology, Inc. All rights reserved.
Timing Diagrams
t RP
NOP
T8
ACTIVE
Row
Row
Bank
T9
Don’t Care