BF556C NXP Semiconductors, BF556C Datasheet - Page 8

• Manufacturer Part Number: BF556C
• Manufacturer: NXP Semiconductors

Specifications of BF556C

• Channel Type: N
• Configuration: Single
• Gate-source Voltage (max): -30V
• Drain-gate Voltage (max): -30V
• Drain-source Volt (max): 30V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Compliant

Philips Semiconductors
9397 750 13393
Product data sheet
Fig 12. Gate current as a function of junction
Fig 14. Input capacitance; typical values.
I
(pA)
(pF)
C
GSS
10
iss
10
10
10
1
3
2
1
0
3
2
1
V
temperature; typical values.
V
50
10
DS
DS
= 0 V; V
= 15 V.
8
0
GS
= 20 V.
6
50
4
100
2
T
V
j
GS
( C)
mrc150
mrc140
(V)
150
Rev. 03 — 5 August 2004
0
BF556A; BF556B; BF556C
Fig 13. Reverse transfer capacitance; typical values.
Fig 15. Common-source input admittance; typical
N-channel silicon junction field-effect transistors
g
(mS)
C
(1) b
(2) g
(pF)
is ,
10
10
rss
10
b
0.8
0.6
0.4
0.2
10
is
1
0
1
2
1
2
V
V
values.
10
10
is
is
DS
DS
.
.
= 15 V.
= 10 V; I
8
D
= 1 mA; T
6
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
amb
2
= 25 C.
4
(1)
(2)
f (MHz)
2
V
GS
mrc134
mrc142
(V)
10
0
3
8 of 13