BF556C NXP Semiconductors, BF556C Datasheet - Page 5

• Manufacturer Part Number: BF556C
• Manufacturer: NXP Semiconductors

Specifications of BF556C

• Channel Type: N
• Configuration: Single
• Gate-source Voltage (max): -30V
• Drain-gate Voltage (max): -30V
• Drain-source Volt (max): 30V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Compliant

Philips Semiconductors
8. Dynamic characteristics
Table 8:
T
9397 750 13393
Product data sheet
Symbol
C
C
g
g
g
g
V
j
Fig 2. Drain current as a function of gate-source
is
fs
rs
os
n
iss
rss
= 25 C unless otherwise specified.
(mA)
I
DSS
20
16
12
8
4
0
V
cut-off voltage; typical values.
0
DS
Parameter
input capacitance
reverse transfer capacitance
common source input
conductance
common source transfer
conductance
common source reverse
conductance
common source output
conductance
equivalent input noise voltage
Dynamic characteristics
= 15 V
.
2
4
6
V
GSoff
mrc154
Conditions
V
V
V
V
V
V
V
f = 100 Hz
(V)
DS
DS
DS
DS
DS
DS
DS
V
V
V
V
f = 100 MHz
f = 450 MHz
f = 100 MHz
f = 450 MHz
f = 100 MHz
f = 450 MHz
f = 100 MHz
f = 450 MHz
GS
GS
GS
GS
Rev. 03 — 5 August 2004
8
= 15 V; f = 1 MHz
= 15 V; f = 1 MHz
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V
= 0 V
= 10 V
= 0 V
D
D
D
D
D
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA;
BF556A; BF556B; BF556C
Fig 3. Forward transfer admittance as a function of
N-channel silicon junction field-effect transistors
(mS)
Y
fs
10
8
6
4
2
0
V
gate-source cut-off voltage; typical values.
0
DS
= 15 V; I
2
D
= 1 A.
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
4
Typ
1.7
3
0.8
0.9
15
300
2
1.8
30
60
40
6
6
40
6
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
GSoff
mrc156
(V)
8
Unit
pF
pF
pF
pF
mS
mS
nV/ Hz
S
S
S
S
S
S
S
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