BF556C NXP Semiconductors, BF556C Datasheet - Page 4

• Manufacturer Part Number: BF556C
• Manufacturer: NXP Semiconductors

Specifications of BF556C

• Channel Type: N
• Configuration: Single
• Gate-source Voltage (max): -30V
• Drain-gate Voltage (max): -30V
• Drain-source Volt (max): 30V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Compliant

Philips Semiconductors
7. Static characteristics
Table 7:
T
9397 750 13393
Product data sheet
Symbol
V
V
I
I
DSS
GSS
j
y
y
(BR)GSS
GSoff
= 25 C unless otherwise specified.
fs
os
Parameter
gate-source breakdown voltage
gate-source cut-off voltage
drain current
gate-source leakage current
forward transfer admittance
common source output
admittance
Static characteristics
Conditions
I
I
V
V
V
V
G
D
GS
GS
GS
GS
BF556A
BF556B
BF556C
= 200 A; V
= 1 A; V
Rev. 03 — 5 August 2004
= 0 V; V
= 20 V; V
= 0 V; V
= 0 V; V
DS
DS
DS
DS
DS
DS
= 15 V
= 15 V
= 15 V
BF556A; BF556B; BF556C
= 0 V
= 15 V
= 0 V
N-channel silicon junction field-effect transistors
Min
3
6
11
-
4.5
-
30
0.5
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Typ
-
-
-
-
-
-
40
0.5
Max
-
7
13
18
-
-
7.5
5000
Unit
V
V
mA
mA
mA
pA
mS
S
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