BF556C NXP Semiconductors, BF556C Datasheet - Page 7

• Manufacturer Part Number: BF556C
• Manufacturer: NXP Semiconductors

Specifications of BF556C

• Channel Type: N
• Configuration: Single
• Gate-source Voltage (max): -30V
• Drain-gate Voltage (max): -30V
• Drain-source Volt (max): 30V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Compliant

Philips Semiconductors
9397 750 13393
Product data sheet
Fig 8. Typical output characteristics.
Fig 10. Drain current as a function of gate-source
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
( A)
(1) BF556C.
(2) BF556B.
(3) BF556A.
I
I
10
10
10
D
D
10
10
25
20
15
10
10
5
0
1
3
2
1
2
3
BF556C
V
voltage; typical values.
0
GS
GS
GS
GS
GS
GS
DS
8
= 0 V.
= 1.0 V.
= 2.0 V.
= 3.0 V.
= 4.0 V.
= 5.0 V.
= 15 V.
4
6
(1)
(2)
8
4
12
2
(3)
(1)
(2)
(3)
(4)
(5)
(6)
V
V
DS
GS
mrc147
mrc149
(V)
(V)
16
Rev. 03 — 5 August 2004
0
BF556A; BF556B; BF556C
Fig 9. Typical input characteristics.
Fig 11. Gate current as a function of drain-gate
N-channel silicon junction field-effect transistors
(mA)
(1) BF556C.
(2) BF556B.
(3) BF556A.
(pA)
(1) I
(2) I
(3) I
(4) I
I
I
10
10
D
G
10
30
20
10
10
0
1
2
1
2
V
I
voltage; typical values.
D
D
D
D
GSS
0
6
DS
= 10 mA only for BF556B and BF556C.
= 10 mA.
= 1 mA.
= 0.1 mA.
.
= 15 V.
(4)
4
4
8
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
12
2
(1)
(2)
(3)
V
16
GS
V
(1)
(2)
(3)
(V)
DG
mrc148
mrc151
(V)
20
0
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