PIC18F86K90-I/PT Microchip Technology, PIC18F86K90-I/PT Datasheet - Page 114

• Manufacturer Part Number: PIC18F86K90-I/PT
• Description: 64kB Flash, 4kB RAM, 1kB EE, 16MIPS, NanoWatt XLP, LCD, 5V 80 TQFP 12x12x1mm TRA
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 18Fr

Specifications of PIC18F86K90-I/PT

• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 64MHz
• Connectivity: I²C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, LCD, POR, PWM, WDT
• Number Of I /o: 69
• Program Memory Size: 64KB (32K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 24x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 80-TQFP
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PIC18F87K90 FAMILY
7.4
The erase block is 32 words or 64 bytes for the
PIC18FX5K90
64 words or 128 bytes for the PIC18FX7K90 devices.
Word erase in the Flash array is not supported.
When initiating an erase sequence from the micro-
controller itself, a block of 64 or 128 bytes of program
memory is erased. The Most Significant 16 bits of the
TBLPTR<21:6> point to the block being erased. The
TBLPTR<5:0> bits are ignored.
The EECON1 register commands the erase operation.
The EEPGD bit must be set to point to the Flash
program memory. The WREN bit must be set to enable
write operations. The FREE bit is set to select an erase
operation.
For protection, the write initiate sequence for EECON2
must be used.
A long write is necessary for erasing the internal Flash.
Instruction execution is halted while in a long write
cycle. The long write will be terminated by the internal
programming timer.
EXAMPLE 7-2:
DS39957B-page 114
Required
Sequence
Erasing Flash Program Memory
ERASE_ROW
and
ERASING A FLASH PROGRAM MEMORY ROW
PIC18FX6K90
MOVLW
MOVWF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BCF
BSF
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
CODE_ADDR_UPPER
TBLPTRU
CODE_ADDR_HIGH
TBLPTRH
CODE_ADDR_LOW
TBLPTRL
EECON1, EEPGD
EECON1, CFGS
EECON1, WREN
EECON1, FREE
INTCON, GIE
0x55
EECON2
0xAA
EECON2
EECON1, WR
INTCON, GIE
devices,
and
Preliminary
7.4.1
The sequence of events for erasing a block of internal
program memory location is:
1.
2.
3.
4.
5.
6.
7.
; load TBLPTR with the base
; address of the memory block
; point to Flash program memory
; access Flash program memory
; enable write to memory
; enable Row Erase operation
; disable interrupts
; write 55h
; write 0AAh
; start erase (CPU stall)
; re-enable interrupts
Load the Table Pointer register with the address
of row to be erased.
Set the EECON1 register for the erase operation:
• Set the EEPGD bit to point to program memory
• Clear the CFGS bit to access program memory
• Set the WREN bit to enable writes
• Set the FREE bit to enable the erase
Disable the interrupts.
Write 0x55 to EECON2.
Write 0xAA to EECON2.
Set the WR bit.
This begins the row erase cycle.
The CPU will stall for the duration of the erase
for T
Re-enable interrupts.
IW
. (See parameter D133A.)
FLASH PROGRAM MEMORY
ERASE SEQUENCE
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