MT47H32M16BN-25:D Micron Technology Inc, MT47H32M16BN-25:D Datasheet - Page 26

• Manufacturer Part Number: MT47H32M16BN-25:D
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H32M16BN-25:D

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 295mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

FBGA Package Capacitance
Table 4: Input Capacitance
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
Parameter
Input capacitance: CK, CK#
Delta input capacitance: CK, CK#
Input capacitance: Address balls, bank address
balls, CS#, RAS#, CAS#, WE#, CKE, ODT
Delta input capacitance: Address balls, bank
address balls, CS#, RAS#, CAS#, WE#, CKE, ODT
Input/output capacitance: DQ, DQS, DM, NF
Delta input/output capacitance: DQ, DQS,
DM, NF
Notes:
1. This parameter is sampled. Vdd = +1.8V ±0.1V, VddQ = +1.8V ±0.1V, Vref = Vss, f = 100
2. The capacitance per ball group will not differ by more than this maximum amount for
3. ΔC are not pass/fail parameters; they are targets.
4. Reduce MAX limit by 0.25pF for -25 and -25E speed devices.
5. Reduce MAX limit by 0.5pF for -3, -3E, -5E, -25, -25E, and -37E speed devices.
MHz, T
with I/O balls, reflecting the fact that they are matched in loading.
any given device.
C
= 25°C, Vout(DC) = VddQ/2, Vout (peak-to-peak) = 0.1V. DM input is grouped
Symbol
Cdck
Cdio
Cck
Cdi
Cio
Ci
26
Min
1.0
1.0
2.5
–
–
–
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
Max
0.25
0.25
2.0
2.0
4.0
0.5
© 2004 Micron Technology, Inc. All rights reserved.
Units
pF
pF
pF
pF
pF
pF
Packaging
Notes
2, 3
1, 4
2, 3
1, 5
2, 3
1