MT47H64M16HR-3 IT:HTR Micron Technology Inc, MT47H64M16HR-3 IT:HTR Datasheet - Page 23

• Manufacturer Part Number: MT47H64M16HR-3 IT:HTR
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M16HR-3 IT:HTR

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 450ps
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 135mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Compliant

Electrical Specifications – Absolute Ratings
Table 5: Absolute Maximum DC Ratings
Temperature and Thermal Impedance
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. W 7/11 EN
Parameter
V
V
V
Voltage on any ball relative to V
Input leakage current; any input 0V
balls not under test = 0V
Output leakage current; 0V
abled
V
DD
DDQ
DDL
REF
supply voltage relative to V
leakage current; V
supply voltage relative to V
supply voltage relative to V
Notes:
REF
= Valid V
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions outside those indicated in the operational sections of this specification is not im-
plied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
It is imperative that the DDR2 SDRAM device’s temperature specifications, shown in
Table 6 (page 24), be maintained in order to ensure the junction temperature is in the
proper operating range to meet data sheet specifications. An important step in main-
taining the proper junction temperature is using the device’s thermal impedances cor-
rectly. The thermal impedances are listed in Table 7 (page 25) for the applicable and
available die revision and packages.
Incorrectly using thermal impedances can produce significant errors. Read Micron
technical note TN-00-08,
ces listed in Table 7. For designs that are expected to last several years and require the
flexibility to use several DRAM die shrinks, consider using final target theta values (rath-
er than existing values) to account for increased thermal impedances from the die size
reduction.
The DDR2 SDRAM device’s safe junction temperature range can be maintained when
the T
perature is too high, use of forced air and/or heat sinks may be required in order to sat-
isfy the case temperature specifications.
V
1. V
2. V
3. Voltage on any I/O may not exceed voltage on V
OUT
SS
SS
SSL
SSQ
C
quired when power is ramping down.
REF
DD
REF
specification is not exceeded. In applications where the device’s ambient tem-
V
, V
V
DDQ
level
IN
DDQ
0.6 × V
; DQ and ODT dis-
V
, and V
DD
; all other
DDQ
DDL
; however, V
must be within 300mV of each other at all times; this is not re-
“Thermal Applications”
Electrical Specifications – Absolute Ratings
23
V
Symbol
REF
IN
V
V
I
V
VREF
, V
I
DDQ
DDL
OZ
may be
DD
I
I
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
V
Min
–1.0
–0.5
–0.5
–0.5
DDQ
1Gb: x4, x8, x16 DDR2 SDRAM
–5
–5
–2
prior to using the thermal impedan-
provided that V
DDQ
.
Max
2.3
2.3
2.3
2.3
5
5
2
‹ 2007 Micron Technology, Inc. All rights reserved.
REF
Units
μA
μA
μA
300mV.
V
V
V
V
Notes
1, 2
1
1
3