TC59LM818DMBI-37 Toshiba, TC59LM818DMBI-37 Datasheet - Page 48

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TC59LM818DMBI-37

Manufacturer Part Number
TC59LM818DMBI-37
Description
Manufacturer
Toshiba
Type
DDR FCRAMr
Datasheet

Specifications of TC59LM818DMBI-37

Organization
16Mx18
Density
288Mb
Address Bus
17b
Access Time (max)
650ps
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
2.5V
Package Type
BGA
Operating Temp Range
-40C to 100C
Operating Supply Voltage (max)
2.625V
Operating Supply Voltage (min)
2.375V
Supply Current
420mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Not Compliant
DATA INPUT/OUTPUT: DQ0~DQ17
data of DQ0 to DQ17 are outputted synchronizing with the both edges of QS output signal.
DATA STROBE: DS, QS
POWER SUPPLY: V
REFERENCE VOLTAGE: V
Method of data strobe is chosen by Extended mode register.
(1) Unidirectional DS / QS mode
(2) Unidirectional DS / Free running QS mode
The input data of DQ0 to DQ17 are taken in synchronizing with the both edges of DS input signal. The output
V
V
V
DD
DDQ
REF
Both edges of QS are used for trigger signal of all DQs at Read operation. During Write, Auto-Refresh and
NOP cycle, QS assert always “Low” level.
Both edges of QS are used for trigger signal of all DQs at Read operation. QS assert always toggle signal.
This strobe type is easy to use for pin to pin connect application.
and V
DS is input signal and QS is output signal. Both edges of DS are used to sample all DQs at Write operation.
DS is input signal and QS is output signal. Both edge of DS are used to sample all DQs at Write operation.
is reference voltage for all input signals.
and V
SS
SSQ
are power supply pins for memory core and peripheral circuits.
are power supply pins for the output buffer.
DD
, V
DDQ
REF
, V
SS
, V
SSQ
TC59LM818DMBI-37
2005-03-07 48/55
Rev 1.2

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