SIC779CD-T1-GE3 Vishay, SIC779CD-T1-GE3 Datasheet - Page 11

• Manufacturer Part Number: SIC779CD-T1-GE3
• Description: MOSFET & Power Driver ICs 40A 3-16V Built-In PWM Cont
• Manufacturer: Vishay
• Type: DrMOS Power Stager

Specifications of SIC779CD-T1-GE3

• Product: Half-Bridge Drivers
• Rise Time: 8 ns
• Fall Time: 8 ns
• Propagation Delay Time: 20 ns
• Supply Voltage (max): 16 V
• Supply Voltage (min): 3 V
• Supply Current: 400 uA
• Maximum Power Dissipation: 25 W
• Maximum Operating Temperature: + 125 C
• Package / Case: MLP-66-40
• Minimum Operating Temperature: - 40 C
• Output Current: 40 A
• Output Voltage: 5 V
• Transistor Polarity: N-Channel
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Document Number: 67538
S11-0703-Rev. B, 18-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
ELECTRICAL CHARACTERISTICS
PWM: 2 V/div.
Time:
5 ms/div.
Time: 20 ns/div.
Time: 500 ns/div.
V
IN
Switching Waveforms at 30 A Load (PWM Rising Edge)
: 5 V/div.
GH: 10 V/div.
V
SWH
Switching Waveforms with SMOD enabled
V
V
V
: 10 V/div.
IN
IN
IN
Startup at V
I
L
= 12 V, V
GL: 5 V/div.
= 12 V, V
= 12 V, V
V
: 5 A/div.
DRV
/V
CIN
OUT
OUT
OUT
: 2 V/div.
DRV
= 1.2 V, F
= 1.2 V, F
= 1.2 V, F
/V
CIN
Ramping up
SW
SW
SW
= 500 kHz
= 500 kHz
= 500 kHz
This document is subject to change without notice.
V
PWM: 3 V/div.
OUT
V
SWH
GH: 5 V/div.
: 0.5 V/div.
GL: 2 V/div.
: 5 V/div.
V
Time: 500 ns/div.
SWH
GL: 2 V/div.
: 5 V/div.
Switching Waveforms at 30 A Load (PWM Falling Edge)
PWM: 2 V/div.
Switching Waveforms with SMOD disabled
V
SWH
V
V
V
GH: 10 V/div.
Startup at V
IN
IN
IN
: 10 V/div.
= 12 V, V
= 12 V, V
= 12 V, V
GH: 5 V/div.
V
OUT
OUT
OUT
OUT
DRV
: 0.5 V/div.
/V
= 1.2 V, F
= 1.2 V, F
= 1.2 V, F
CIN
I
L
: 5 A/div.
Vishay Siliconix
Ramping down
GL: 5 V/div.
www.vishay.com/doc?91000
SW
SW
SW
= 500 kHz
= 500 kHz
= 500 kHz
V
DRV
www.vishay.com
Time: 10 ns/div.
SiC779
PWM: 3 V/div.
/V
V
CIN
IN
: 5 V/div.
: 2 V/div.
11