SIC779CD-T1-GE3 Vishay, SIC779CD-T1-GE3 Datasheet - Page 12

• Manufacturer Part Number: SIC779CD-T1-GE3
• Description: MOSFET & Power Driver ICs 40A 3-16V Built-In PWM Cont
• Manufacturer: Vishay
• Type: DrMOS Power Stager

Specifications of SIC779CD-T1-GE3

• Product: Half-Bridge Drivers
• Rise Time: 8 ns
• Fall Time: 8 ns
• Propagation Delay Time: 20 ns
• Supply Voltage (max): 16 V
• Supply Voltage (min): 3 V
• Supply Current: 400 uA
• Maximum Power Dissipation: 25 W
• Maximum Operating Temperature: + 125 C
• Package / Case: MLP-66-40
• Minimum Operating Temperature: - 40 C
• Output Current: 40 A
• Output Voltage: 5 V
• Transistor Polarity: N-Channel
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

SiC779
Vishay Siliconix
ELECTRICAL CHARACTERISTICS
www.vishay.com
12
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PWM: 3 V/div.
V
V
Time: 20 µs/div.
V
V
Time: 2 ms/div.
IN
OUT
IN
DRV
: 5 V/div.
: 5 V/div.
: 0.5 V/div.
/V
CIN
: 2 V/div.
V
DSBL#: 2 V/div.
V
V
V
IN
IN
Startup with PWM existing Tri-state
IN
OUT
Startup with DSBL# Toggle High
= 12 V, V
= 12 V, V
= 12 V, V
Startup with V
: 0.5 V/div.
OUT
OUT
OUT
= 1.2 V, F
= 1.2 V, F
= 1.2 V, F
IN
Ramping up
SW
SW
SW
= 500 kHz
= 500 kHz
= 500 kHz
V
This document is subject to change without notice.
DRV
V
V
Time: 50 µs/div.
V
SWH
SWH
OUT
/V
: 0.5 V/div.
CIN
: 0.5 V/div.
: 0.5 V/div.
: 2 V/div.
V
Time: 200 µs/div.
Time: 200 µs/div.
V
IN
Time: 2 ms/div.
SWH
: 5 V/div.
PWM: 3 V/div.
: 0.5 V/div.
DSBL#: 2 V/div.
V
SWH
: 0.5 V/div.
Shutdown with PWM entering Tri-state
V
V
V
V
IN
IN
IN
Shutdown with DSBL# Toggle Low
Power Off with V
OUT
= 12 V, V
= 12 V, V
= 12 V, V
: 0.5 V/div.
OUT
OUT
OUT
= 1.2 V, F
= 1.2 V, F
= 1.2 V, F
IN
S11-0703-Rev. B, 18-Apr-11
Ramping down
Document Number: 67538
www.vishay.com/doc?91000
SW
SW
SW
= 500 kHz
= 500 kHz
= 500 kHz
V
V
DRV
DRV
V
V
/V
OUT
OUT
/V
CIN
V
CIN
: 0.5 V/div.
IN
: 0.5 V/div.
: 2 V/div.
: 2 V/div.
: 5 V/div.