SIC779CD-T1-GE3 Vishay, SIC779CD-T1-GE3 Datasheet - Page 13

• Manufacturer Part Number: SIC779CD-T1-GE3
• Description: MOSFET & Power Driver ICs 40A 3-16V Built-In PWM Cont
• Manufacturer: Vishay
• Type: DrMOS Power Stager

Specifications of SIC779CD-T1-GE3

• Product: Half-Bridge Drivers
• Rise Time: 8 ns
• Fall Time: 8 ns
• Propagation Delay Time: 20 ns
• Supply Voltage (max): 16 V
• Supply Voltage (min): 3 V
• Supply Current: 400 uA
• Maximum Power Dissipation: 25 W
• Maximum Operating Temperature: + 125 C
• Package / Case: MLP-66-40
• Minimum Operating Temperature: - 40 C
• Output Current: 40 A
• Output Voltage: 5 V
• Transistor Polarity: N-Channel
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TYPICAL EFFICIENCY CURVES
TYPICAL POWER LOSS
Document Number: 67538
S11-0703-Rev. B, 18-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
92
90
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80
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14
12
10
8
6
4
2
0
0
0
This document is subject to change without notice.
V
V
IN
IN
= 12 V, V
= 12 V, V
(Power loss includes SiC779 and inductor loss.)
4
(Efficiency includes SiC779 and inductor loss.)
4
Inductance = 0.22 µH, DCR = 0.29 mΩ;
Inductance = 0.22 µH, DCR = 0.29 mΩ;
8
8
OUT
OUT
12
12
500 kHz
= 1.2 V, V
= 1.2 V, V
Load Current (A)
Load Current (A)
Figure 6a
Figure 6b
16
16
DRV
20
20
DRV
= V
= V
24
500 kHz
24
1 MHz
CIN
CIN
= 5 V; No Air Flow:
= 5 V; No Air Flow:
28
28
1 MHz
300 kHz
32
32
300 kHz
36
36
40
40
Vishay Siliconix
www.vishay.com/doc?91000
www.vishay.com
SiC779
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