SIC779CD-T1-GE3 Vishay, SIC779CD-T1-GE3 Datasheet - Page 8

• Manufacturer Part Number: SIC779CD-T1-GE3
• Description: MOSFET & Power Driver ICs 40A 3-16V Built-In PWM Cont
• Manufacturer: Vishay
• Type: DrMOS Power Stager

Specifications of SIC779CD-T1-GE3

• Product: Half-Bridge Drivers
• Rise Time: 8 ns
• Fall Time: 8 ns
• Propagation Delay Time: 20 ns
• Supply Voltage (max): 16 V
• Supply Voltage (min): 3 V
• Supply Current: 400 uA
• Maximum Power Dissipation: 25 W
• Maximum Operating Temperature: + 125 C
• Package / Case: MLP-66-40
• Minimum Operating Temperature: - 40 C
• Output Current: 40 A
• Output Voltage: 5 V
• Transistor Polarity: N-Channel
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

SiC779
Vishay Siliconix
ELECTRICAL CHARACTERISTICS
www.vishay.com
8
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1.3
1.2
1.1
1.0
0.9
0.8
1.0
0.8
0.6
0.4
0.2
0.0
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
- 40 - 25 - 10
- 40 - 25 - 10
- 40 - 25 - 10
I
CIN
DSBL Falling Threshold (V) vs. Temperature (°C)
PWM Falling Threshold (V) vs. Temperature (°C)
(mA) vs. Temperature at Frequency = 300 kHz
D = 10 %, V
5
5
5
20 35 50 65 80 95 110 125 140
20 35 50 65 80 95 110 125 140
20 35 50 65 80 95 110 125 140
V
V
Temperature (°C)
Temperature (°C)
Temperature (°C)
CIN
CIN
= V
= V
CIN
DRV
DRV
= V
= 5 V
= 5 V
DRV
This document is subject to change without notice.
= 5 V
1.40
1.80
1.75
1.70
1.65
1.60
1.55
1.50
1.45
4.4
4.2
4.0
3.8
3.6
3.4
3.2
3.0
20
18
16
14
12
10
8
6
- 40 - 25 - 10
I
- 40 - 25 - 10
- 40 - 25 - 10
DRV
DSBL Rising Threshold (V) vs. Temperature (°C)
PWM Rising Threshold (V) vs. Temperature (°C)
(mA) vs. Temperature at Frequency = 300 kHz
D = 10 %, V
5
5
5
20 35 50 65 80 95 110 125 140
20 35 50 65 80 95 110 125 140
20 35 50 65 80 95 110 125 140
V
V
Temperature (°C)
Temperature (°C)
Temperature (°C)
CIN
CIN
= V
= V
CIN
S11-0703-Rev. B, 18-Apr-11
DRV
DRV
Document Number: 67538
= V
www.vishay.com/doc?91000
= 5 V
= 5 V
DRV
= 5 V