1MBI300NN-120 Fuji Semiconductor, 1MBI300NN-120 Datasheet - Page 2

• Manufacturer Part Number: 1MBI300NN-120
• Description: IGBT Module, 1MBI300NN-120 1200V/300A 1 in one-package
• Manufacturer: Fuji Semiconductor

Specifications of 1MBI300NN-120

• Capacitance, Gate: 48000 pF
• Current, Collector: 300 A
• Package Type: M129
• Polarity: N-Channel
• Power Dissipation: 2100 W
• Resistance, Thermal, Junction To Case: 0.06 °C/W
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 3.3 V
• Lead Free Status / Rohs Status: RoHS Compliant part

1MBI300NP-120
1MBI300NN-120
1200V / 300A 1 in one-package
· High speed switching
· Voltage drive
· Low inductance module structure
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector
current
Max. power dissipation
Operating temperature
Storage temperature
Isolation voltage
Screw torque
*
*
*
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
Item
Thermal resistance
*
1 :
2 :
3 :
4
: This is the value which is defined mounting on the additional cooling fin with thermal compound
Electrical characteristics (at Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Recommendable value : 2.5 to 3.5 N·m(M5) or (M6)
Recommendable value : 3.5 to 4.5 N·m(M6)
Recommendable value : 1.3 to 1.7 N·m(M4)
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Features
Applications
Maximum ratings and characteristics
Continuous
1ms
Continuous
1ms
Symbol
Terminals *
V
V
I
I
-I
-I
P
T
T
V
Mounting *
Terminals *
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)*
C
C
C
C
j
stg
I
I
V
V
C
C
C
t
t
t
t
V
t
CES
GES
C
is
Symbol
CES
GES
on
r
off
f
rr
pulse
GE(th)
CE(sat)
ies
oes
res
F
pulse
4
2
3
1
Characteristics
Min.
-40 to +125
AC 2500 (1min.)
Characteristics
Min.
–
–
–
Rating
–
–
4.5
–
–
–
–
–
–
–
–
–
–
+150
1200
2100
±20
300
600
300
600
3.5
4.5
1.7
48000
17400
15480
Typ.
Typ.
–
–
0.0125
–
–
–
–
0.65
0.25
0.95
0.35
–
–
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
Max.
60
Max.
4.0
7.5
3.3
–
–
–
1.2
0.6
1.5
0.5
3.0
0.35
0.06
0.12
–
V
V
V
V
V
V
f=1MHz
V
I
V
R
I
I
IGBT
Diode
the base to cooling fin
Conditions
C
F
F
Conditions
GE
CE
CE
GE
GE
CE
CC
GE
G
=300A, V
=300A
=300A
=2.7 ohm
=0V, V
=0V, V
=20V, I
=15V, I
=0V
=10V
=600V
=±15V
Equivalent Circuit Schematic
C
CE
GE
C
C
GE
=300mA
=300A
=1200V
=±20V
=0V
¤ Current control circuit
¤
IGBT Module
Unit
°C/W
°C/W
°C/W
mA
µA
V
V
pF
µs
V
µs
Unit
E