1MBI300NN-120 Fuji Semiconductor, 1MBI300NN-120 Datasheet - Page 3

• Manufacturer Part Number: 1MBI300NN-120
• Description: IGBT Module, 1MBI300NN-120 1200V/300A 1 in one-package
• Manufacturer: Fuji Semiconductor

Specifications of 1MBI300NN-120

• Capacitance, Gate: 48000 pF
• Current, Collector: 300 A
• Package Type: M129
• Polarity: N-Channel
• Power Dissipation: 2100 W
• Resistance, Thermal, Junction To Case: 0.06 °C/W
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 3.3 V
• Lead Free Status / Rohs Status: RoHS Compliant part

IGBT Module
1MBI300NP-120 / 1MBI300NN-120
Capacitance vs. Collector-Emitter voltage
Transient thermal resistance
Tj=25°C
100
0.1
10
0.01
1
0.001
0
5
10
15
20
25
30
35
0.001
0.01
0.1
1
Collector-Emitter voltage : V
[V]
CE
Pulse width : P
[sec.]
W
Outline Drawings, mm
mass : 370g