BUK7506-75B NXP Semiconductors, BUK7506-75B Datasheet - Page 10

• Manufacturer Part Number: BUK7506-75B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7506-75B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0056 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 159 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7506-75B,127

NXP Semiconductors
8. Revision history
Table 7.
BUK7506-75B
Product data sheet
Document ID
BUK7506-75B v.3
Modifications:
BUK75_7606_75B v.2
(9397 750 10278)
Revision history
Release date
20110209
20020920
•
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK7506-75B separated from data sheet BUK75_7606_75B v.2.
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 9 February 2011
Data sheet status
Product data sheet
Product data
N-channel TrenchMOS standard level FET
Change notice
-
-
BUK7506-75B
Supersedes
BUK75_7606_75B v.2
BUK75_7606_75B v.1
© NXP B.V. 2011. All rights reserved.
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