BUK7506-75B NXP Semiconductors, BUK7506-75B Datasheet - Page 6

• Manufacturer Part Number: BUK7506-75B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7506-75B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0056 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 159 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7506-75B,127

NXP Semiconductors
BUK7506-75B
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
400
300
200
100
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
10
20
2
2
8
4
min
7
6.5
typ
6
V
4
GS
= 4.5 V
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
V
5.5
DS
(V)
03ng98
03aa35
(V)
Rev. 03 — 9 February 2011
10
6
Fig 6.
Fig 8.
R
(mΩ)
DSon
(S)
g
fs
120
100
80
60
40
20
8
7
6
5
4
0
of gate-source voltage; typical values
junction temperature
T
Drain-source on-state resistance as a function
Gate-source threshold voltage as a function of
5
0
j
N-channel TrenchMOS standard level FET
= 25 °C; I
D
10
20
= 25 A
BUK7506-75B
40
15
© NXP B.V. 2011. All rights reserved.
V
GS
I
D
(A)
(V)
03ng97
03ng95
20
60
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