BUK7506-75B NXP Semiconductors, BUK7506-75B Datasheet - Page 8

• Manufacturer Part Number: BUK7506-75B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7506-75B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0056 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 159 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7506-75B,127

NXP Semiconductors
BUK7506-75B
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical value
V
(V)
GS
10
8
6
4
2
0
gate charge; typical values
0
20
V
DD
= 14 V
40
60
V
(A)
I
DD
S
100
80
60
40
20
0
= 60 V
0.0
80
All information provided in this document is subject to legal disclaimers.
Q
G
03ng94
(nC)
0.2
Rev. 03 — 9 February 2011
100
T
j
= 175 °C
0.4
Fig 14. Input, output and reverse transfer capacitances
0.6
(pF)
8000
6000
4000
2000
C
0
10
as a function of drain-source voltage; typical
values
0.8
T
−1
N-channel TrenchMOS standard level FET
j
V
= 25 °C
SD
03ng93
(V)
1.0
1
C
C
C
iss
oss
rss
BUK7506-75B
10
V
© NXP B.V. 2011. All rights reserved.
DS
(V)
03nh00
10
2
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