BUK7506-75B NXP Semiconductors, BUK7506-75B Datasheet - Page 9

• Manufacturer Part Number: BUK7506-75B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7506-75B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0056 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 159 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7506-75B,127

NXP Semiconductors
7. Package outline
Fig 16. Package outline SOT78A (TO-220AB)
BUK7506-75B
Product data sheet
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
VERSION
OUTLINE
SOT78A
4.5
4.1
A
1.39
1.27
A 1
0.9
0.6
b
IEC
D
L
b 1
1.3
1.0
L 1
D 1
(1)
b 1
0.7
0.4
3-lead TO-220AB
c
All information provided in this document is subject to legal disclaimers.
JEDEC
15.8
15.2
1
e
D
E
p
REFERENCES
2
e
Rev. 03 — 9 February 2011
D 1
6.4
5.9
0
3
b
10.3
9.7
E
L 2
SC-46
q
JEITA
scale
5
2.54
e
10 mm
15.0
13.5
L
mounting
base
N-channel TrenchMOS standard level FET
L 1
3.30
2.79
(1)
max.
Q
3.0
L 2
A
A 1
PROJECTION
3.8
3.6
c
EUROPEAN
p
BUK7506-75B
3.0
2.7
q
2.6
2.2
Q
© NXP B.V. 2011. All rights reserved.
ISSUE DATE
03-01-22
05-03-14
SOT78A
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