BUK7506-75B NXP Semiconductors, BUK7506-75B Datasheet - Page 4

• Manufacturer Part Number: BUK7506-75B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7506-75B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0056 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 159 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7506-75B,127

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7506-75B
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
(A)
I
10
10
10
D
10
10
10
−1
−2
−3
1
3
2
1
10
10
−1
−6
δ = 0.5
0.2
0.1
0.05
0.02
single shot
10
Limit R
−5
All information provided in this document is subject to legal disclaimers.
Capped at 75 A due to package
DSon
Conditions
see
vertical in still air
= V
10
Rev. 03 — 9 February 2011
1
Figure 4
−4
DS
/I
D
10
−3
DC
10
10
N-channel TrenchMOS standard level FET
−2
P
V
DS
t
10
p
(V)
−1
T
t
p
t
BUK7506-75B
p
Min
-
-
= 10 μs
δ =
(s)
03ng87
03ng88
100 μs
1 ms
10 ms
100 ms
t
T
t
p
10
1
2
Typ
-
60
© NXP B.V. 2011. All rights reserved.
Max
0.5
-
Unit
K/W
K/W
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