BUK7506-75B NXP Semiconductors, BUK7506-75B Datasheet - Page 7

• Manufacturer Part Number: BUK7506-75B
• Description: MOSFET Power HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7506-75B

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0056 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 159 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7506-75B,127

NXP Semiconductors
BUK7506-75B
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
(A)
DSon
I
D
100
80
60
40
20
14
12
10
0
8
6
4
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
V
GS
= 4.5 V
50
T
j
2
5
= 175 °C
100
5.5
6
4
150
T
V
j
GS
10
All information provided in this document is subject to legal disclaimers.
= 25 °C
6.5
I
D
(V)
(A)
03ng96
03ng99
8
Rev. 03 — 9 February 2011
200
6
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.4
1.6
0.8
5
4
3
2
1
0
0
−60
−60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS standard level FET
0
0
BUK7506-75B
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
T
j
j
(°C)
(°C)
03aa32
03nb25
180
180
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