BUK95150-55A NXP Semiconductors, BUK95150-55A Datasheet - Page 4

• Manufacturer Part Number: BUK95150-55A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK95150-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.137 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 13 A
• Power Dissipation: 53 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK95150-55A,127

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK95150-55A
Product data sheet
Symbol
R
R
Fig 5.
Fig 6.
th(j-mb)
th(j-a)
unclamped inductive load
Single-shot avalanche rating; avalanche current as a function of avalanche period
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Z
(K/W)
th(j-mb)
I
(A)
AS
10
10
10
10
10
-1
-2
1
1
2
10
10
-3
-6
All information provided in this document is subject to legal disclaimers.
0.05
0.02
T
0.2
0.1
j
prior to avalanche150 °C
0
10
-5
10
Rev. 02 — 21 April 2011
-2
10
-4
Conditions
in free air
10
10
-1
-3
P
10
-2
t
25 °C
p
1
T
10
t
AV
003aaf417
003aaf404
-1
(ms)
t
p
(s)
N-channel TrenchMOS logic level FET
T
t
t
p
10
1
BUK95150-55A
Min
-
-
Typ
-
60
© NXP B.V. 2011. All rights reserved.
Max
2.8
-
Unit
K/W
K/W
4 of 12