BUK95150-55A NXP Semiconductors, BUK95150-55A Datasheet - Page 9

• Manufacturer Part Number: BUK95150-55A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK95150-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.137 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 13 A
• Power Dissipation: 53 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK95150-55A,127

NXP Semiconductors
8. Revision history
Table 7.
BUK95150-55A
Product data sheet
Document ID
BUK95150-55A v.2
Modifications:
BUK95150_96150-55A v.1 20000201
Revision history
Release date
20110421
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK95150-55A separated from data sheet BUK95150_96150-55A v.1.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product specification
Rev. 02 — 21 April 2011
Change notice
-
-
N-channel TrenchMOS logic level FET
BUK95150-55A
Supersedes
BUK95150_96150-55A v.1
-
© NXP B.V. 2011. All rights reserved.
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