BUK95150-55A NXP Semiconductors, BUK95150-55A Datasheet - Page 7

• Manufacturer Part Number: BUK95150-55A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK95150-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.137 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 13 A
• Power Dissipation: 53 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK95150-55A,127

NXP Semiconductors
BUK95150-55A
Product data sheet
Fig 13. Gate-source threshold voltage as a function of
Fig 15. Input, output and reverse transfer capacitances
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
GS(th)
(nF)
(V)
C
2.5
2.0
1.5
1.0
0.5
2.5
2.0
1.5
1.0
0.5
0
0
-100
10
junction temperature
as a function of drain-source voltage; typical
values
I
V
V
D
-2
C
GS
GS
C
C
= 1 mA; V
oss
iss
rss
= 0 V; f = 1 MHz
= 0 V
10
-1
DS
0
= V
maximum
minimum
typical
GS
1
100
(A)
I
F
100
80
60
40
20
10
0
0
T
All information provided in this document is subject to legal disclaimers.
j
V
(°C)
003aaf413
003aaf411
DS
(V)
200
10
0.5
Rev. 02 — 21 April 2011
2
T
j
= 150 °C
1.0
Fig 14. Sub-threshold drain current as a function of
Fig 16. Gate-source voltage as a function of gate
T
j
= 25 °C
V
(A)
(V)
I
GS
D
10
10
10
10
10
10
-1
-2
-3
-4
-5
-6
1.5
5
4
3
2
1
0
gate-source voltage
charge; typical values
T
T
0
0
j
j
V
= 25 °C; V
= 25 °C; I
SDS
003aaf415
(V)
N-channel TrenchMOS logic level FET
2 %
2.0
5
D
DS
1
= 25 A
V
= V
BUK95150-55A
DS
GS
= 14 V
typical
10
98 %
2
15
V
V
© NXP B.V. 2011. All rights reserved.
DS
GS
Q
003aaf412
003aaf414
G
= 44 V
(V)
(nC)
20
3
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