BUK95150-55A NXP Semiconductors, BUK95150-55A Datasheet - Page 3
![MOSFET Power RAIL PWR-MOS](/photos/16/4/160465/to3_sml.jpg)
BUK95150-55A
Manufacturer Part Number
BUK95150-55A
Description
MOSFET Power RAIL PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.BUK95150-55A.pdf
(12 pages)
Specifications of BUK95150-55A
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.137 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
13 A
Power Dissipation
53 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Other names
BUK95150-55A,127
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BUK95150-55A
Manufacturer:
NXP
Quantity:
51 000
Company:
Part Number:
BUK95150-55A
Manufacturer:
NXP
Quantity:
12 500
NXP Semiconductors
BUK95150-55A
Product data sheet
Fig 1.
Fig 3.
P
(%)
I
(A)
DM
der
100
10
10
80
60
40
20
10
0
1
3
2
function of mounting base temperature
currents as a function of drain-source voltage
Normalized total power dissipation as a
T
Safe operating area; continuous and peak drain
0
1
mb
= 25 °C; I
R
DS(on)
40
= V
DM
DS
80
/ I
is single pulse
D.C.
D
10
120
V
DS
160
(V)
All information provided in this document is subject to legal disclaimers.
T
003aaf401
003aaf403
mb
t
10 μs
100 μs
1 ms
10 ms
p
(°C)
= 1 μs
200
10
Rev. 02 — 21 April 2011
2
Fig 2.
Fig 4.
WDSS
(%)
(%)
I
D
100
120
100
80
60
40
20
80
60
40
20
0
0
function of mounting base temperature
20
avalanche energy as a function of
mounting-base temperature
V
Normalized continuous drain current as a
I
Normalised drain-source non-repetitive
0
D
GS
= 75 A
≥ 5 V
N-channel TrenchMOS logic level FET
40
60
80
BUK95150-55A
100
120
140
160
© NXP B.V. 2011. All rights reserved.
T
T
mb
003aaf402
003aaf416
mb
(°C)
(°C)
200
180
3 of 12