BUK95150-55A NXP Semiconductors, BUK95150-55A Datasheet - Page 3

• Manufacturer Part Number: BUK95150-55A
• Description: MOSFET Power RAIL PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK95150-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.137 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 13 A
• Power Dissipation: 53 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK95150-55A,127

NXP Semiconductors
BUK95150-55A
Product data sheet
Fig 1.
Fig 3.
P
(%)
I
(A)
DM
der
100
10
10
80
60
40
20
10
0
1
3
2
function of mounting base temperature
currents as a function of drain-source voltage
Normalized total power dissipation as a
T
Safe operating area; continuous and peak drain
0
1
mb
= 25 °C; I
R
DS(on)
40
= V
DM
DS
80
/ I
is single pulse
D.C.
D
10
120
V
DS
160
(V)
All information provided in this document is subject to legal disclaimers.
T
003aaf401
003aaf403
mb
t
10 μs
100 μs
1 ms
10 ms
p
(°C)
= 1 μs
200
10
Rev. 02 — 21 April 2011
2
Fig 2.
Fig 4.
WDSS
(%)
(%)
I
D
100
120
100
80
60
40
20
80
60
40
20
0
0
function of mounting base temperature
20
avalanche energy as a function of
mounting-base temperature
V
Normalized continuous drain current as a
I
Normalised drain-source non-repetitive
0
D
GS
= 75 A
≥ 5 V
N-channel TrenchMOS logic level FET
40
60
80
BUK95150-55A
100
120
140
160
© NXP B.V. 2011. All rights reserved.
T
T
mb
003aaf402
003aaf416
mb
(°C)
(°C)
200
180
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