STM3220G-SK/IAR STMicroelectronics, STM3220G-SK/IAR Datasheet - Page 112

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STM3220G-SK/IAR

Manufacturer Part Number
STM3220G-SK/IAR
Description
DEV KIT STM32F207ZG KICKSTART
Manufacturer
STMicroelectronics
Series
IAR Kickstartr
Type
MCUr
Datasheets

Specifications of STM3220G-SK/IAR

Contents
Hardware, Software and Documentation
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
For Use With/related Products
STM32F207
Other names
497-11404
Electrical characteristics
Note:
112/163
Table 62.
1. Better performance could be achieved in restricted V
2. Based on characterization, not tested in production.
3. If IRROFF is set to V
ADC accuracy vs. negative injection current: Injecting a negative current on any of the
standard (non-robust) analog input pins should be avoided as this significantly reduces the
accuracy of the conversion being performed on another analog input. It is recommended to
add a Schottky diode (pin to ground) to standard analog pins which may potentially inject
negative currents.
Any positive injection current within the limits specified for I
Section 5.3.16
Figure 49. ADC accuracy characteristics
1. Example of an actual transfer curve.
2. Ideal transfer curve.
3. End point correlation line.
4. E
Symbol
a
temperature range.
EO = Offset Error: deviation between the first actual transition and the first ideal one.
EG = Gain Error: deviation between the last ideal transition and the last actual one.
ED = Differential Linearity Error: maximum deviation between actual steps and the ideal one.
EL = Integral Linearity Error: maximum deviation between any actual transition and the end point
correlation line.
EO
EG
ED
ET
EL
T
= Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves.
Total unadjusted error
Offset error
Gain error
Differential linearity error
Integral linearity error
ADC accuracy
does not affect the ADC accuracy.
Parameter
DD
, this value can be lowered to 1.65 V when the device operates in a reduced
(1)
Doc ID 15818 Rev 6
f
f
V
PCLK2
ADC
DDA
= 30 MHz, R
= 1.8
= 60 MHz,
Test conditions
DD
(3)
, frequency and temperature ranges.
to 3.6 V
AIN
< 10 kΩ,
INJ(PIN)
STM32F205xx, STM32F207xx
and ΣI
±1.5
±1.5
±1.5
Typ
±2
±1
INJ(PIN)
Max
±2.5
±3
±2
±5
±3
(2)
in
Unit
LSB

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