STM3220G-SK/IAR STMicroelectronics, STM3220G-SK/IAR Datasheet - Page 86

• Manufacturer Part Number: STM3220G-SK/IAR
• Description: DEV KIT STM32F207ZG KICKSTART
• Manufacturer: STMicroelectronics
• Series: IAR Kickstartr
• Type: MCUr

Specifications of STM3220G-SK/IAR

• Contents: Hardware, Software and Documentation
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• For Use With/related Products: STM32F207
• Other names: 497-11404

Electrical characteristics
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Table 33.
1. TBD stands for “to be defined”.
2. Based on characterization, not tested in production.
3. The maximum programming time is measured after 100K erase operations.
t
t
t
ERASE128KB
ERASE16KB
ERASE64KB
Symbol
V
t
t
prog
ME
prog
Flash memory programming
Word programming time
Sector (16 KB) erase time
Sector (64 KB) erase time
Sector (128 KB) erase time
Mass erase time
Programming voltage
Parameter
Doc ID 15818 Rev 6
Program/erase parallelism
(PSIZE) = x 8/16/32
Program/erase parallelism
(PSIZE) = x 8
Program/erase parallelism
(PSIZE) = x 16
Program/erase parallelism
(PSIZE) = x 32
Program/erase parallelism
(PSIZE) = x 8
Program/erase parallelism
(PSIZE) = x 16
Program/erase parallelism
(PSIZE) = x 32
Program/erase parallelism
(PSIZE) = x 8
Program/erase parallelism
(PSIZE) = x 16
Program/erase parallelism
(PSIZE) = x 32
Program/erase parallelism
(PSIZE) = x 8
Program/erase parallelism
(PSIZE) = x 16
Program/erase parallelism
(PSIZE) = x 32
32-bit program operation
16-bit program operation
8-bit program operation
(1)
Conditions
STM32F205xx, STM32F207xx
Min
2.7
2.1
1.8
-
-
-
-
-
-
-
-
-
-
-
-
-
(2)
1200
Typ
400
300
250
700
550
1.3
16
16
11
2
1
8
-
-
-
Max
100
2400
1400
1100
TBD
TBD
TBD
800
600
500
2.6
3.6
3.6
3.6
4
2
(3)
(2)
Unit
ms
ms
µs
V
V
V
s
s