PHC21025 NXP Semiconductors, PHC21025 Datasheet - Page 10

• Manufacturer Part Number: PHC21025
• Description: Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PHC21025

• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Power Dissipation: 2W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
PHC21025
Product data sheet
Fig 13. Source current as a function of source-drain
Fig 15. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
10
10
10
I
S
10
6
4
2
0
4
3
2
voltage; N-channel; typical values
of drain current; N-channel; typical values
V
(1) T
(2) T
(3) T
V
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
0
0
GD
DS
D
D
D
D
D
D
≥ I
= 0.
j
j
j
= 150 °C.
= 25 °C.
= -55 °C.
= 0.1 A.
= 0.5 A.
= 1 A.
= 2.2 A.
= 3.5 A.
= 7 A.
D
2
x R
(1)(2)
DSon
(3)(4)(5)
0.5
; T
4
(6)
(1)
j
= 25 °C.
(2)
6
1
(3)
V
SD
All information provided in this document is subject to legal disclaimers.
8
V
(V)
GS
mda217
mbe159
(V)
1.5
10
Rev. 04 — 17 March 2011
Fig 14. Source current as a function of source-drain
Fig 16. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
10
10
10
I
S
−6
−4
−2
0
4
3
2
voltage; P-channel; typical values
of drain current; typical values
V
(1) T
(2) T
(3) T
-V
(1) I
(2) I
(3) I
(4) I
(5) I
0
0
GD
DS
D
D
D
D
D
= 0.
j
j
j
≥ -I
= -4.5 A.
Complementary intermediate level FET
= 150 °C.
= 25 °C.
= -55 °C.
= -0.1 A.
= -0.5 A.
= -1 A.
= -2.3 A.
−2
D
(1)
−0.5
x R
(2)(3)
DSon
(4) (5)
−4
; T
−1
j
= 25 °C.
(1)
−6
PHC21025
(2)
−1.5
© NXP B.V. 2011. All rights reserved.
−8
(3)
V
V
SD
GS
mbe158
mda165
(V)
(V)
−10
−2
10 of 16