PHC21025 NXP Semiconductors, PHC21025 Datasheet - Page 8

• Manufacturer Part Number: PHC21025
• Description: Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PHC21025

• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Power Dissipation: 2W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
PHC21025
Product data sheet
Fig 5.
Fig 7.
(pF)
600
400
200
C
(A)
I
16
12
D
0
8
4
0
voltage; N-channel; typical values
function of drain-source voltage; N-channel;
typical values
Capacitance as a function of drain-source
Output characteristics: drain current as a
0
0
V
10 V
GS
2
=
6 V
5 V
4.5 V
4 V
3.5 V
3 V
10
4
6
C
C
C
oss
rss
iss
20
8
V
All information provided in this document is subject to legal disclaimers.
DS
10
V
(V)
mbe137
mbe142
DS
(V)
30
12
Rev. 04 — 17 March 2011
Fig 6.
Fig 8.
(pF)
600
C
400
200
−10
(A)
I
−8
−6
−4
−2
D
0
0
voltage; P-channel; typical values
function of drain-source voltage; P-channel;
typical values
Capacitance as a function of drain-source
Output characteristics: drain current as a
0
0
V
−10 V
GS
Complementary intermediate level FET
−2
=
−7.5 V
−10
−4
−6
−20
−8
PHC21025
C
C
C
oss
iss
rss
V
© NXP B.V. 2011. All rights reserved.
DS
−10
−2.5 V
V
−3.5 V
(V)
−6 V
−4.5 V
−3 V
−5 V
−4 V
mbe154
mbe144
DS
(V)
−30
−12
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