PHC21025 NXP Semiconductors, PHC21025 Datasheet - Page 9

• Manufacturer Part Number: PHC21025
• Description: Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PHC21025

• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Power Dissipation: 2W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
PHC21025
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
V
(V)
(A)
I
GS
D
16
12
10
8
4
0
8
6
4
2
0
function of gate-source voltage; N-channel;
typical values
charge; N-channel; typical values
Transfer characteristics: drain current as a
0
0
2
2
4
4
6
6
All information provided in this document is subject to legal disclaimers.
Q
V
G
GS
mbe141
mbe136
(nC)
(V)
Rev. 04 — 17 March 2011
8
8
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source voltage as a function of gate
V
(V)
(A)
I
GS
−10
−10
D
−8
−6
−4
−2
−8
−6
−4
−2
0
0
function of gate-source voltage; P-channel;
typical values
charge; P-channel; typical values
0
0
Complementary intermediate level FET
−2
−2
−4
−4
−6
PHC21025
−6
© NXP B.V. 2011. All rights reserved.
−8
V
Q
GS
g
mbe157
mbe145
(nC)
(V)
−10
−8
9 of 16