PHC21025 NXP Semiconductors, PHC21025 Datasheet - Page 7

• Manufacturer Part Number: PHC21025
• Description: Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PHC21025

• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Power Dissipation: 2W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
Table 6.
PHC21025
Product data sheet
Symbol
Q
Q
C
C
C
g
t
t
Source-drain diode
V
t
off
on
rr
fs
SD
iss
oss
rss
GS
GD
Characteristics
Parameter
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
transfer conductance
turn-off time
turn-on time
source-drain voltage
reverse recovery time
…continued
All information provided in this document is subject to legal disclaimers.
Conditions
I
T
see
I
V
see
I
V
see
I
T
see
V
T
V
T
V
T
V
T
V
T
V
T
V
P-channel
V
N-channel
V
R
T
V
R
T
V
R
T
I
N-channel; see
I
P-channel; see
I
V
P-channel
I
V
N-channel
Rev. 04 — 17 March 2011
D
D
D
D
S
S
S
S
j
j
j
j
j
j
j
j
j
j
j
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
GS
GS
G(ext)
G(ext)
G(ext)
= 2.3 A; V
= 25 °C; N-channel;
= -2.3 A; V
= -2.3 A; V
= 2.3 A; V
= 25 °C; N-channel;
= 25 °C; N-channel; see
= 25 °C; P-channel; see
= 25 °C; N-channel; see
= 25 °C; P-channel; see
= 25 °C; N-channel; see
= 25 °C; P-channel; see
= 25 °C; N-channel
= 25 °C; P-channel
= 25 °C; N-channel
= 1.25 A; V
= -1.25 A; V
= -1.25 A; dI
= 1.25 A; dI
Figure 11
Figure 12
Figure 12
Figure 11
= 20 V; V
= -20 V; V
= 20 V; V
= -20 V; V
= 20 V; V
= -20 V; V
= -20 V; I
= 20 V; I
= 20 V; V
= -20 V; V
= 20 V; V
= -10 V; T
= -10 V; T
= 0 V; V
= 0 V; V
= 4.7 Ω; I
= 4.7 Ω; I
= 4.7 Ω; I
DS
DS
DS
DS
D
DS
DS
D
GS
GS
GS
GS
GS
GS
S
GS
j
j
GS
GS
GS
GS
= 2.2 A; T
S
/dt = -100 A/µs;
= 15 V; V
= 15 V; V
= 25 °C; P-channel;
= 25 °C; P-channel;
= -1 A; T
= -25 V; T
= 25 V; T
Figure 14
Figure 13
/dt = 100 A/µs;
D
= -15 V;
= -15 V;
D
D
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; f = 1 MHz;
= 0 V; f = 1 MHz;
= 10 V;
= 10 V;
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; f = 1 MHz;
= 0 V; f = 1 MHz;
= -10 V;
= -1 A; R
= 1 A; R
= 1 A; R
j
j
GS
GS
j
j
= 25 °C;
j
j
= 25 °C;
= 25 °C;
= 25 °C;
L
L
= 25 °C;
= 25 °C;
L
Figure 6
Figure 6
Figure 6
Figure 5
Figure 5
Figure 5
= 10 V;
= 10 V;
= 20 Ω;
= 20 Ω;
Complementary intermediate level FET
= 20 Ω;
Min
-
-
-
-
-
-
-
-
-
-
1
2
-
-
-
-
-
-
-
-
PHC21025
Typ
1
1
3
2.5
250
250
140
140
50
50
2
4.5
25
50
20
15
-
-
150
35
© NXP B.V. 2011. All rights reserved.
Max
-
-
-
-
-
-
-
-
-
-
-
-
140
140
80
40
1.2
-1.6
200
100
Unit
nC
nC
nC
nC
pF
pF
pF
pF
pF
pF
S
S
ns
ns
ns
ns
V
V
ns
ns
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