PHC21025 NXP Semiconductors, PHC21025 Datasheet - Page 2

• Manufacturer Part Number: PHC21025
• Description: Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PHC21025

• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Power Dissipation: 2W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PHC21025
Product data sheet
Pin
1
2
3
4
5
6
7
8
Type number
PHC21025
Symbol Description
S1
G1
S2
G2
D2
D2
D1
D1
Pinning information
Ordering information
source1
gate1
source2
gate2
drain2
drain2
drain1
drain1
Table 1.
[1]
Package
Name
SO8
Symbol
Dynamic characteristics
Q
GD
Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with a
thermal resistance from ambient to solder point of 90 K/W.
Quick reference data
Parameter
gate-drain charge
Description
plastic small outline package; 8 leads; body width 3.9 mm
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 17 March 2011
Simplified outline
SOT96-1 (SO8)
…continued
8
1
Conditions
V
V
P-channel; see
V
V
N-channel; see
GS
DS
GS
DS
= -15 V; T
= 15 V; T
= -10 V; I
= 10 V; I
5
4
D
j
D
Complementary intermediate level FET
j
= 25 °C;
= 2.3 A;
= 25 °C;
= -2.3 A;
Figure 12
Figure 11
Graphic symbol
D1 D1 D2 D2
S1 G1 S2 G2
Min
-
-
PHC21025
© NXP B.V. 2011. All rights reserved.
Typ
3
2.5
sym114
Version
SOT96-1
Max Unit
-
-
2 of 16
nC
nC