PHC21025 NXP Semiconductors, PHC21025 Datasheet - Page 12

• Manufacturer Part Number: PHC21025
• Description: Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PHC21025

• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Power Dissipation: 2W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
7. Package outline
Fig 20. Package outline SOT96-1 (SO8)
PHC21025
Product data sheet
SO8: plastic small outline package; 8 leads; body width 3.9 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
inches
UNIT
mm
VERSION
OUTLINE
SOT96-1
0.069
max.
1.75
A
0.010
0.004
0.25
0.10
A
1
0.057
0.049
1.45
1.25
A
076E03
2
IEC
1
8
Z
pin 1 index
0.25
0.01
A
y
3
e
0.019
0.014
0.49
0.36
b
p
D
0.0100
0.0075
All information provided in this document is subject to legal disclaimers.
0.25
0.19
MS-012
JEDEC
c
b
REFERENCES
p
0.20
0.19
D
5.0
4.8
5
4
0
(1)
Rev. 04 — 17 March 2011
w
0.16
0.15
E
4.0
3.8
(2)
M
JEITA
scale
1.27
0.05
2.5
c
e
A
0.244
0.228
2
H
6.2
5.8
A
E
1
0.041
1.05
5 mm
L
H
Complementary intermediate level FET
0.039
0.016
E
E
1.0
0.4
detail X
L
p
L
0.028
0.024
L
0.7
0.6
Q
p
Q
PROJECTION
(A )
EUROPEAN
0.25
0.01
3
A
v
θ
0.25
0.01
A
w
X
v
PHC21025
M
0.004
0.1
A
© NXP B.V. 2011. All rights reserved.
y
ISSUE DATE
99-12-27
03-02-18
0.028
0.012
Z
0.7
0.3
(1)
SOT96-1
8
0
θ
o
o
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