BF909WR NXP Semiconductors, BF909WR Datasheet - Page 5

• Manufacturer Part Number: BF909WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF909WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.04A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 3.6@5V@Gate 1/2.3@5V@Gate 2pF
• Output Capacitance (typ)@vds: 2.3@5VpF
• Reverse Capacitance (typ): 0.03@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 280mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2010 Sep 15
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FET
(dBμV)
V
f
V
V
T
unw
V unw
Fig.3
DS
DS
G2-S
j
(mA)
= 25 C.
I D
= 60 MHz; T
= 5 V; V
= 5 V.
110
100
Fig.5 Output characteristics; typical values.
= 4 V.
90
80
30
20
10
0
0
0
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.17.
GG
= 5 V; f
amb
10
2
= 25 C; R
w
= 50 MHz.
20
4
V
G1
G1 S
= 120 k.
1.3 V
1.2 V
1.0 V
1.1 V
0.9 V
= 1.4 V
30
6
gain reduction (dB)
40
8
V
DS
MLB936
MLB938
(V)
50
10
5
handbook, halfpage
handbook, halfpage
V
T
V
T
(mA)
j
j
DS
DS
= 25 C.
= 25 C.
I D
(μA)
I G1
= 5 V.
Fig.4 Transfer characteristics; typical values.
= 5 V.
30
20
10
Fig.6
200
150
100
0
50
0
0
0
Gate 1 current as a function of gate 1
voltage; typical values.
0.4
1
0.8
V
G2 S
V
G2 S
= 4 V 3 V
1.2
2
= 4 V
Product specification
3 V
3.5 V
2.5 V
2 V
V
BF909WR
1.6
G1 S
V
2 V
1.5 V
1 V
2.5 V
G1 S
MLB937
MLB939
(V)
(V)
2.0
3