BF909WR NXP Semiconductors, BF909WR Datasheet - Page 8

• Manufacturer Part Number: BF909WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF909WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.04A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 3.6@5V@Gate 1/2.3@5V@Gate 2pF
• Output Capacitance (typ)@vds: 2.3@5VpF
• Reverse Capacitance (typ): 0.03@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 280mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2010 Sep 15
N-channel dual-gate MOS-FET
V
I
D
Fig.15 Forward transfer admittance and phase as
(mS)
DS
y fs
= 15 mA; T
10
10
= 5 V; V
1
2
10
a function of frequency; typical values.
G2
amb
= 4 V.
= 25 C.
R GEN
50 Ω
10
V I
2
y fs
ϕ
fs
f (MHz)
50 Ω
R2
Fig.17 Cross-modulation test set-up.
4.7 nF
MLB948
C2
10
V GG
10 k Ω
3
R1
R G1
10
10
1
(deg)
ϕ
V AGC
2
fs
4.7 nF
C1
8
handbook, halfpage
V
I
D
DUT
DS
(mS)
= 15 mA; T
y os
10
10
= 5 V; V
10
1
Fig.16 Output admittance as a function of
1
2
10
10 Ω
R3
C5
2.2
pF
G2
amb
V DS
= 4 V.
frequency; typical values.
= 25 C.
≈
4.7 nF
L1
C3
350 nH
C4
12 pF
MLD151
10
R L
50 Ω
2
b os
g os
Product specification
f (MHz)
BF909WR
MLB949
10
3