BF909WR NXP Semiconductors, BF909WR Datasheet - Page 7

• Manufacturer Part Number: BF909WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF909WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.04A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 3.6@5V@Gate 1/2.3@5V@Gate 2pF
• Output Capacitance (typ)@vds: 2.3@5VpF
• Reverse Capacitance (typ): 0.03@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 280mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2010 Sep 15
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FET
V
R
V
I
Fig.11 Drain current as a function of gate 2 voltage;
D
Fig.13 Input admittance as a function of frequency;
DS
DS
(mA)
G1
(mS)
= 15 mA; T
I D
y is
10
= 5 V; T
= 120 k (connected to V
= 5 V; V
10
10
20
16
12
1
8
4
0
2
1
10
0
typical values; see Fig.17.
typical values.
j
G2
= 25 C.
amb
= 4 V.
= 25 C.
2
GG
).
10
2
b is
g is
4
f (MHz)
V
V
GG
G2 S
= 5 V
4 V
4.5 V
3.5 V
3 V
MLB946
MLB944
(V)
10
6
3
7
handbook, halfpage
V
R
V
I
D
(μS)
Fig.14 Reverse transfer admittance and phase as
DS
DS
G1
y rs
(μA)
I G1
= 15 mA; T
10
10
10
= 5 V; T
= 120 k (connected to V
= 5 V; V
Fig.12 Gate 1 current as a function of gate 2
1
40
30
20
10
3
2
10
0
0
a function of frequency; typical values.
j
G2
= 25 C.
amb
voltage; typical values; see Fig.17.
= 4 V.
= 25 C.
2
GG
10
).
2
ϕ
y rs
rs
4
f (MHz)
Product specification
V
V
GG
G2 S
BF909WR
= 5 V
MLB947
4.5 V
4 V
3.5 V
3 V
MLB945
(V)
10
6
3
10
10
10
1
(deg)
ϕ
rs
3
2