BF909WR NXP Semiconductors, BF909WR Datasheet - Page 6

• Manufacturer Part Number: BF909WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF909WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.04A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 3.6@5V@Gate 1/2.3@5V@Gate 2pF
• Output Capacitance (typ)@vds: 2.3@5VpF
• Reverse Capacitance (typ): 0.03@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 280mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2010 Sep 15
handbook, halfpage
handbook, halfpage
N-channel dual-gate MOS-FET
V
R
V
T
DS
G1
j
(mS)
DS
(mA)
y fs
= 25 C.
I D
Fig.7
= 5 V; V
= 120 k (connected to V
Fig.9
= 5 V.
60
40
20
16
12
0
8
4
0
0
0
G2-S
Forward transfer admittance as a
function of drain current; typical values.
Drain current as a function of gate 1
supply voltage (= V
see Fig.17.
= 4 V.
10
2
GG
); T
j
= 25 C.
GG
20
); typical values;
4
V
G2 S
V
I
D
GG
(mA)
3.5 V
3 V
2.5 V
MLB942
(V)
2 V
= 4 V
MLB940
30
6
6
handbook, halfpage
handbook, halfpage
V
V
T
V
R
Fig.8
j
DS
G2-S
G2-S
(mA)
G1
= 25 C.
(mA)
I D
I D
= 5 V.
connected to V
= 4 V.
= 4 V.
Fig.10 Drain current as a function of gate 1
25
20
15
10
30
20
10
5
0
0
0
0
Drain current as a function of gate 1 current;
typical values.
(= V
typical values; see Fig.17.
GG
GG
2
; T
R
j
) and drain supply voltage;
G1
20
= 25 C.
= 47 kΩ
4
V
68 kΩ
GG
40
Product specification
= V
6
BF909WR
I
G1
DS
(μA)
100 kΩ
120 kΩ
150 kΩ
180 kΩ
220 kΩ
(V)
82 kΩ
MLB943
MLB941
60
8