BF909WR NXP Semiconductors, BF909WR Datasheet - Page 9

• Manufacturer Part Number: BF909WR
• Description: Enhancement type Field-Effect Transistor in a plastic SOT343R package
• Manufacturer: NXP Semiconductors

Specifications of BF909WR

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.04A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: CMPAK
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 3.6@5V@Gate 1/2.3@5V@Gate 2pF
• Output Capacitance (typ)@vds: 2.3@5VpF
• Reverse Capacitance (typ): 0.03@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 280mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
Table 1 Scattering parameters: V
Table 2 Noise data: V
2010 Sep 15
(MHz)
1000
N-channel dual-gate MOS-FET
100
200
300
400
500
600
700
800
900
f
50
(MHz)
MAGNITUDE
800
f
(ratio)
0.985
0.978
0.957
0.931
0.899
0.868
0.848
0.816
0.792
0.772
0.754
s
11
DS
= 5 V; V
ANGLE
12.6
25.0
36.5
47.6
57.4
66.6
74.6
82.2
89.3
95.6
(deg)
6.4
G2-S
DS
(dB)
F
2.00
= 5 V; V
MAGNITUDE
min
= 4 V; I
(ratio)
4.064
3.997
3.886
3.682
3.484
3.260
3.053
2.829
2.652
2.470
2.328
G2-S
D
= 15 mA; T
s
21
= 4 V; I
ANGLE
172.3
(deg)
164.9
150.8
137.3
123.8
101.0
111.7
90.3
79.9
69.5
59.5
D
9
amb
= 15 mA; T
(ratio)
0.603
= 25 C
MAGNITUDE
(ratio)
0.001
0.002
0.005
0.006
0.007
0.007
0.006
0.005
0.005
0.005
0.006

amb
opt
= 25 C
s
12
(deg)
67.71
ANGLE
138.7
(deg)
114.9
86.9
82.7
74.3
68.9
59.6
57.9
58.5
65.5
83.3
MAGNITUDE
(ratio)
0.985
0.982
0.973
0.960
0.947
0.936
0.927
0.919
0.913
0.910
0.909
Product specification
BF909WR
0.581
s
r
22
n
ANGLE
12.6
18.6
24.2
29.6
34.8
39.8
44.6
49.5
54.6
(deg)
3.2
6.4