ED DDR3 1G PCF8000 Samsung Semiconductor, ED DDR3 1G PCF8000 Datasheet - Page 44

• Manufacturer Part Number: ED DDR3 1G PCF8000
• Manufacturer: Samsung Semiconductor
• Type: DDR3 SDRAMr

Specifications of ED DDR3 1G PCF8000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 20ns
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 130mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

K4B1G04(08/16)46E
[ Table 46 ] DDR3-1600 Speed Bins
Internal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 6
CL = 7
CL = 8
CL = 9
CL = 10
CL = 11
Supported CL Settings
Supported CWL Settings
Parameter
CL-nRCD-nRP
Speed
CWL = 5,6,7
CWL = 7, 8
CWL = 5,6
CWL = 5,6
CWL = 5
CWL = 6
CWL = 5
CWL = 6
CWL = 7
CWL = 8
CWL = 5
CWL = 6
CWL = 7
CWL = 8
CWL = 7
CWL = 8
CWL = 7
CWL = 8
CWL = 8
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
Symbol
tRCD
tRAS
tRP
tRC
tAA
Page 44 of 61
(13.125)
(13.125)
(13.125)
(48.125)
13.75
13.75
13.75
48.75
1.875
1.875
1.25
min
2.5
1.5
1.5
35
5,9
5,9
5,9
5,9
(Optional) Note 9,10
(Optional) Note 9,10
(Optional) Note 5,9
6,7,8,9,10,11
DDR3-1600
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
11-11-11
5,6,7,8
TBD
9*tREFI
<1.875
<1.875
max
<2.5
<2.5
<1.5
3.3
20
-
-
-
1Gb DDR3 SDRAM
Rev. 1.0 February 2009
Units
nCK
nCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1,2,3,4,8
1,2,3,4,8
1,2,3,4,8
1,2,3,4,8
1,2,3,4,8
1,2,3,8
1,2,3,8
1,2,3,4
1,2,3,4
1,2,3,8
1,2,3,4
1,2,3,5
Note
4
4
4
4
4
4
4