ED DDR3 1G PCF8000 Samsung Semiconductor, ED DDR3 1G PCF8000 Datasheet - Page 56

• Manufacturer Part Number: ED DDR3 1G PCF8000
• Manufacturer: Samsung Semiconductor
• Type: DDR3 SDRAMr

Specifications of ED DDR3 1G PCF8000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 20ns
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 130mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

K4B1G04(08/16)46E
Note :Clock and Strobe are drawn on a different time scale.
Figure 24 - Illustration of tangent line for hold time tDH (for DQ with respect to strobe) and tIH
(for ADD/CMD with respect to clock)
Hold Slew Rate tangent line [ V
V
V
V
V
V
V
Rising Signal
IL
IL
REF
DDQ
IH
IH
(DC) max
(AC) max
(AC) min
(DC) min
(DC)
DQS
DQS
CK
CK
V
SS
=
dc to V
dc to V
region
region
REF
REF
tDS
Delta TR
tIS
tangent
REF
line
Page 56 of 61
(DC) - V
Hold Slew Rate
Falling Signal
tDH
tIH
Delta TR
IL
(DC)max ]
=
nominal
tangent line [ V
line
tDS
tIS
tangent
line
Delta TF
IH
tDH
tIH
(DC)min - V
Delta TF
nominal
1Gb DDR3 SDRAM
line
Rev. 1.0 February 2009
REF
(DC) ]