SAM3SD8B Atmel Corporation, SAM3SD8B Datasheet - Page 28

• Manufacturer Part Number: SAM3SD8B
• Manufacturer: Atmel Corporation

9. Memories
9.1
9.1.1
9.1.2
9.1.3
9.1.3.1
9.1.3.2
9.1.3.3
28
Embedded Memories
SAM3S8/SD8 Summary
Internal SRAM
Internal ROM
Embedded Flash
Flash Overview
Flash Power Supply
Enhanced Embedded Flash Controller
The SAM3S8 device (512-Kbytes, single bank flash) embeds a total of 64-Kbytes high-speed
SRAM.
The SAM3SD8 device (512-Kbytes, dual bank flash) embeds a total of 64-Kbytes high-speed
SRAM.
The SRAM is accessible over System Cortex-M3 bus at address 0x2000 0000.
The SRAM is in the bit band region. The bit band alias region is from 0x2200 0000 and
0x23FF FFFF.
The SAM3S8/SD8 embeds an Internal ROM, which contains the SAM Boot Assistant
(SAM-BA
(FFPI).
At any time, the ROM is mapped at address 0x0080 0000.
The Flash of the SAM3S8 (512-Kbytes single bank flash) is organized in one bank of 2048
pages of 256 bytes.
The Flash of the SAM3SD8 (512-Kbytes, dual bank flash) is organized in two banks of 1024
pages of 256 bytes each.
The Flash contains a 128-byte write buffer, accessible through a 32-bit interface.
The Flash is supplied by VDDCORE.
The Enhanced Embedded Flash Controller (EEFC) manages accesses performed by the mas-
ters of the system. It enables reading the Flash and writing the write buffer. It also contains a
User Interface, mapped on the APB.
The Enhanced Embedded Flash Controller ensures the interface of the Flash block with the 32-
bit internal bus. Its 128-bit wide memory interface increases performance.
The user can choose between high performance or lower current consumption by selecting
either 128-bit or 64-bit access. It also manages the programming, erasing, locking and unlocking
sequences of the Flash using a full set of commands.
One of the commands returns the embedded Flash descriptor definition that informs the system
about the Flash organization, thus making the software generic.
®
), In Application Programming routines (IAP) and Fast Flash Programming Interface
11090AS–ATARM–10-Feb-12