BLF145 NXP Semiconductors, BLF145 Datasheet - Page 11

• Manufacturer Part Number: BLF145
• Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range
• Manufacturer: NXP Semiconductors

NXP Semiconductors
handbook, halfpage
handbook, halfpage
HF power MOS transistor
Class-AB operation; V
R
solid line: T
dotted line: T
Fig.15 Third order intermodulation distortion as a
Class-AB operation; V
P
R
Fig.17 Power gain as a function of frequency,
L
th mb-h
1
(dB)
d 3
(dB)
= 30 W; T
= 34 ; Z
G p
20
30
40
50
21
20
19
= 0.3 K/W; f = 28 MHz.
0
0
function of load power, typical values.
typical values.
h
L
h
= 25 C.
h
= 8.9
= 25 C; R
= 70 C.
6
j1 .
DS
DS
20
th mb-h
= 28 V; I
= 28 V; I
12
= 0.3 K/W;
DQ
DQ
= 0.25 A;
= 0.25 A;
18
40
P L (W)
24
f (MHz)
MGP046
MGP048
60
30
Rev. 04 - 5 January 2007
Table 1
Input impedance as a function of frequency
Class-AB operation; V
T
Z
handbook, halfpage
h
L
= 25 C; R
= 8.9 + j1 .
Class-AB operation; V
R
solid line: T
dotted line: T
Fig.16 Fifth order intermodulation distortion as a
th mb-h
(dB)
d 5
20
30
40
50
0
= 0.3 K/W; f = 28 MHz.
function of load power, typical values.
(MHz)
h
1.5
3.0
6.0
= 25 C.
h
10
15
20
25
30
th mb-h
f
= 70 C.
= 0.3 K/W; R1 = 34 ;
DS
20
DS
= 28 V; I
= 28 V; I
DQ
= 0.25 A;
DQ
40
= 0.25 A; P
Product specification
32.4
30.7
27.4
32.9
18.5
15.1
12.5
32.9
P L (W)
( )
Z
BLF145
MGP047
i
j11.9
j14.6
j15.4
j15.3
j14.6
11 of 15
j2.2
j4.3
j8.1
60
L
= 30 W;