BLF145 NXP Semiconductors, BLF145 Datasheet - Page 5

Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range

BLF145

Manufacturer Part Number
BLF145
Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
handbook, halfpage
handbook, halfpage
R DS(on)
HF power MOS transistor
(mV/K)
V
Fig.4
I
V
Fig.6
( )
D
T.C.
DS
GS
= 1.5 A;
= 10 V.
0.8
0.6
0.4
0.2
= 10 V.
0
4
2
0
2
4
6
10
0
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values.
Drain-source on-state resistance as a
function of junction temperature; typical
values.
40
10
2
80
10
3
120
I D (mA)
T j ( C)
MGP038
MGP036
160
10
Rev. 04 - 5 January 2007
4
handbook, halfpage
handbook, halfpage
V
Fig.5
V
Fig.7
(pF)
DS
GS
C
(A)
I D
240
180
120
= 10 V.
= 0; f = 1 MHz.
12
60
8
4
0
0
0
0
Drain current as a function of gate-source
voltage; typical values.
Input and output capacitance as functions
of drain-source voltage; typical values.
10
5
T j
125 C
10
20
25 C
C is
C os
Product specification
15
30
V GS (V)
V DS (V)
BLF145
MGP037
MGP039
5 of 15
20
40

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