BLF145 NXP Semiconductors, BLF145 Datasheet - Page 2

• Manufacturer Part Number: BLF145
• Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range
• Manufacturer: NXP Semiconductors

NXP Semiconductors
FEATURES
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for SSB transmitter
applications in the HF frequency
range. The transistor is encapsulated
in a 4-lead, SOT123A flange
package, with a ceramic cap. All
leads are isolated from the flange.
Matched gate-source voltage (V
groups are available on request.
PINNING - SOT123A
QUICK REFERENCE DATA
RF performance at T
Note
1. 2-tone efficiency.
SSB, class-A
SSB, class-AB
High power gain
Low noise figure
Good thermal stability
Withstands full load mismatch.
HF power MOS transistor
PIN
MODE OF OPERATION
1
2
3
4
drain
source
gate
source
DESCRIPTION
h
= 25 C in a common source test circuit.
GS
f (MHz)
)
28
28
PIN CONFIGURATION
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
handbook, halfpage
V
DS
Rev. 04 - 5 January 2007
28
28
(V)
1
2
I
D
1.3
Fig.1 Simplified outline and symbol.
(A)
30 (PEP)
8 (PEP)
P
L
WARNING
CAUTION
(W)
MSB057
4
3
G
typ. 20
p
24
(dB)
g
MBB072
Product specification
typ. 40
D
(%)
(1)
d
s
BLF145
2 of 15
typ. 35
d
3
(dB)
40