BLF145 NXP Semiconductors, BLF145 Datasheet - Page 4

Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range

BLF145

Manufacturer Part Number
BLF145
Description
Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
CHARACTERISTICS
T
V
V
I
I
V
g
R
I
C
C
C
j
DSS
GSS
DSX
GS
fs
V
= 25 C unless otherwise specified.
(BR)DSS
GSth
HF power MOS transistor
DSon
is
os
rs
GS
SYMBOL
group indicator
GROUP
G
M
A
B
C
D
E
H
K
N
F
L
J
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched devices
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
PARAMETER
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
Rev. 04 - 5 January 2007
I
V
V
I
I
I
I
V
V
V
V
D
D
D
D
D
GS
GS
GS
GS
GS
GS
= 10 mA; V
= 10 mA; V
= 10 mA; V
= 1.5 A; V
= 1.5 A; V
= 0; V
= 20 V; V
= 10 V; V
= 0; V
= 0; V
= 0; V
CONDITIONS
GROUP
DS
DS
DS
DS
DS
GS
W
= 28 V
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
GS
DS
DS
O
Q
R
U
DS
P
S
T
V
X
Y
Z
DS
= 10 V
= 10 V
= 10 V
= 10 V
= 0
= 10 V
= 0
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
65
2
1.2
MIN.
LIMITS
0.4
10
125
75
7
(V)
Product specification
TYP. MAX. UNIT
BLF145
2
1
4.5
100
0.75
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4 of 15
V
mA
V
mV
S
A
pF
pF
pF
A

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