BLF145 NXP Semiconductors, BLF145 Datasheet - Page 7

• Manufacturer Part Number: BLF145
• Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range
• Manufacturer: NXP Semiconductors

NXP Semiconductors
APPLICATION INFORMATION FOR CLASS-A OPERATION
T
RF performance in SSB operation in a common source class-A circuit.
Note
1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
handbook, halfpage
SSB, class-A
h
HF power MOS transistor
= 25 C; R
Class-A operation; V
R
solid line: T
dotted line: T
Fig.9
OPERATION
power the values should be decreased by 6 dB.
th mb-h
MODE OF
(dB)
G p
30
28
26
24
= 0.3 K/W; f = 28 MHz.
0
Power gain as a function of load power;
typical values.
h
= 25 C.
h
th mb-h
= 70 C.
DS
= 0.3 K/W; R1 = 26 ; unless otherwise specified.
= 28 V; I
10
(MHz)
28
f
D
= 1.3 A;
20
V
(V)
P L (W) PEP
28
DS
MGP040
30
Rev. 04 - 5 January 2007
(A)
1.3
I
D
8 (PEP)
(W)
handbook, halfpage
P
L
Class-A operation; V
R
solid line: T
dotted line: T
Fig.10 Third order intermodulation distortion as a
(dB)
th mb-h
d 3
20
30
40
50
60
0
= 0.3 K/W; f = 28 MHz.
function of load power; typical values.
typ. 27
h
(dB)
G
= 25 C.
h
24
= 70 C.
P
DS
= 28 V; I
10
typ. 43
(dB)
d
40
3
D
(1)
= 1.3 A;
20
typ. 70
(dB)
Product specification
P L (W) PEP
d
40
5
(1)
MGP041
BLF145
18.4
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L
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