BLF145 NXP Semiconductors, BLF145 Datasheet - Page 9

• Manufacturer Part Number: BLF145
• Description: Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter applications in the HF frequency range
• Manufacturer: NXP Semiconductors

NXP Semiconductors
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
RF performance in SSB operation in a common source class-AB circuit.
Note
1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope
Ruggedness in class-AB operation
The BLF145 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases at P
single tone under the following conditions:
V
handbook, halfpage
SSB, class-AB
h
DS
OPERATION
HF power MOS transistor
= 25 C; R
MODE OF
Class-AB operation; V
R
solid line: T
dotted line: T
Fig.12 Power gain as a function of load power,
power the values should be decreased by 6 dB.
= 28 V; f = 28 MHz; T
th mb-h
(dB)
G p
22
20
18
16
= 0.3 K/W; f = 28 MHz.
0
typical values.
h
= 25 C.
h
th mb-h
= 70 C.
(MHz)
= 0.3 K/W; R1 = 34 ; unless otherwise specified.
DS
28
20
f
= 28 V; I
h
= 25 C; R
DQ
= 0.25 A;
V
(V)
28
DS
40
th mb-h
P L (W)
0.25
MGP043
I
(A)
DQ
= 0.3 K/W at rated load power.
60
Rev. 04 - 5 January 2007
30 (PEP)
(W)
P
L
handbook, halfpage
typ. 20
Class-AB operation; V
R
solid line: T
dotted line: T
Fig.13 Two tone efficiency as a function of load
(dB)
th mb-h
(%)
G
D
60
40
20
p
0
0
= 0.3 K/W; f = 28 MHz.
power, typical values.
h
= 25 C.
h
= 70 C.
typ. 40
(%)
D
DS
20
= 28 V; I
typ. 35
(dB)
d
DQ
3
(1)
= 0.25 A;
40
Product specification
typ. 40
(dB)
P L (W)
d
5
(1)
BLF145
MGP044
9 of 15
8.9
60
L
= 30 W
( )
Z
L
j1.0