MBM29LV800TE Fujitsu Microelectronics, Inc., MBM29LV800TE Datasheet
MBM29LV800TE
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MBM29LV800TE Summary of contents
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SPANSION Flash Memory TM Data Sheet September 2003 This document specifies SPANSION Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and ...
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... The MBM29LV800TE/BE are a 8 M-bit, 3.0 V-only Flash memory organized bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin TSOP (1) , 48-pin CSOP and 48- ball FBGA package. These devices are designed to be programmed in a system with the standard system 3 supply ...
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... MBM29LV800TE/BE (Continued) The standard MBM29LV800TE/BE offer access times 60 ns and 90 ns, allowing operation of high-speed microprocessors without wait state. To eliminate bus contention, the devices have separate chip enable (CE) , write enable (WE) , and output enable (OE) controls. The MBM29LV800TE/BE are pin and command set compatible with JEDEC standard E are written to the command register using standard microprocessor write timings ...
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... Data Polling and Toggle Bit Feature for Detection of Program or Erase Cycle Completion • Ready/Busy Output (RY/BY) Hardware method for detection of program or erase cycle completion • Automatic Sleep Mode When addresses remain stable, MBM29LV800TE/BE automatically switch themselves to low power mode. • Low V Write Inhibit 2 • ...
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... N. N.C. RY/ 60/70/90 TSOP (1) (Marking Side) MBM29LV800TE/MBM29LV800BE Normal Bend (FPT-48P-M19 BYTE ...
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... MBM29LV800TE/BE CSOP (TOP VIEW (Marking side RY/ N.C. 13 RESET 14 WE N. (LCC-48P-M03) 60/70/ ...
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... MBM29LV800TE/BE (Continued 60/70/90 FBGA (TOP VIEW) Marking side ...
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... Pin name Address Inputs Data Inputs/Outputs Chip Enable OE Output Enable WE Write Enable RY/BY Ready/Busy Output RESET Hardware Reset Pin/Temporary Sector Unprotection BYTE Selects 8-bit or 16-bit mode N.C. No Internal Connection V Device Ground SS V Device Power Supply CC MBM29LV800TE/BE Function 60/70/90 7 ...
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... MBM29LV800TE/BE BLOCK DIAGRAM RY/BY Buffer State Control BYTE RESET Command Register CE OE Low V Detector LOGIC SYMBOL 8 60/70/90 RY/BY Erase Voltage Generator Program Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer for Address Program/Erase X-Decoder Latch ...
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... Manufacturer and device codes may also be accessed via a command register write sequence. See “Sector Address Tables (MBM29LV800BE) ” in “ FLEXIBLE SECTOR-ERASE ARCHITECTURE”. *2: Refer to Sector Protection. *3: WE can * 3.6 V (MBM29LV800TE/BE 60 3.6 V (MBM29LV800TE/BE 70/90) *5: Also used for the extended sector protection. MBM29LV800TE/ ...
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... Manufacturer and device codes may also be accessed via a command register write sequence. See “Sector Address Tables (MBM29LV800BE) ” in “ FLEXIBLE SECTOR-ERASE ARCHITECTURE”. *2: Refer to Sector Protection. *3: WE can * 3.6 V (MBM29LV800TE/BE 60 3.6 V (MBM29LV800TE/BE 70/90) *5: Also used for the extended sector protection. 10 60/70/ ...
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... Notes : Address bits Sector Address (SA) . Bus operations are defined in “MBM29LV800TE/BE User Bus Operations (BYTE = V “MBM29LV800TE/BE User Bus Operations (BYTE = V RA Address of the memory location to be read. IA Autoselect read address that sets A PA Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE pulse ...
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... Word Mode : 555h or 2AAh to addresses A Byte Mode : AAAh or 555h to addresses A Both Read/Reset commands are functionally equivalent, resetting the device to the read mode. The command combinations not described in Command Definitions are illegal. MBM29LV800TE/BE Sector Protection Verify Autoselect Codes Type Manufacture’s Code MBM29LV800TE ...
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... FLEXIBLE SECTOR-ERASE ARCHITECTURE Sector Address Tables (MBM29LV800TE) Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 ...
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... MBM29LV800TE/BE Sector Address SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 ...
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... Kbyte 8FFFFh 64 Kbyte 7FFFFh 64 Kbyte 6FFFFh 64 Kbyte 5FFFFh 64 Kbyte 4FFFFh 64 Kbyte 3FFFFh 64 Kbyte 2FFFFh 64 Kbyte 1FFFFh 64 Kbyte 0FFFFh 64 Kbyte 00000h MBM29LV800TE Sector Architecture MBM29LV800TE/BE ( 16) 7FFFFh 64 Kbyte 7DFFFh 64 Kbyte 7CFFFh 64 Kbyte 7BFFFh 64 Kbyte 77FFFh 64 Kbyte 6FFFFh 64 Kbyte 67FFFh 64 Kbyte 5FFFFh 64 Kbyte 57FFFh ...
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... FUNCTIONAL DESCRIPTION Read Mode The MBM29LV800TE/BE have two control functions which must be satisfied in order to obtain data at the outputs the power control and should be used for a device selection the output control and should be used to gate data to the output pins if a device is selected. ...
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... Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing parameters. Sector Protection The MBM29LV800TE/BE feature hardware sector protection. This feature will disable both program and erase operations in any number of sectors (0 through 18) . The sector protection feature is enabled using programming equipment at the user’s site. The devices are shipped with all sectors unprotected. Alternatively, Fujitsu may program and protect sectors in the factory prior to shiping the device ...
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... MBM29LV800TE/BE Extended Sector Protection In addition to normal sector protection, the MBM29LV800TE/BE have Extended Sector Protection as extended function. This function enables to protect sector by forcing V Unlike conventional procedure not necessary to force V pin requires V for sector protection in this mode. The extended sector protect requires V ID this condition the operation is initiated by writing the set-up command (60h) into the command register ...
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... The operation is initiated by writing the Autoselect command sequence into the command register. Following the command write, a read cycle from address XX00h retrieves the manufacture code of 04h. A read cycle from address XX01h for 16 (XX02h for 8) returns the device code (MBM29LV800TE DAh and MBM29LV 800BE 5Bh for 8 mode ...
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... WE. After time-out of “t erase command, the sector erase operation will begin. Multiple sectors may be erased concurrently by writing the six bus cycle operations on “MBM29LV800TE/BE Command Definitions” in “ DEVICE BUS OPERATION”. This sequence is followed with writes of the Sector Erase command to addresses in other sectors desired to be concurrently erased. The time between writes must be less than “ ...
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... Extended Command (1) Fast Mode MBM29LV800TE/BE have Fast Mode function. This mode dispenses with the initial two unclock cycles required in the standard program command sequence by writing Fast Mode command into the command register. In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in standard program command ...
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... DQ 7 Data Polling The MBM29LV800TE/BE devices feature Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program Algorithm, an attempt to read devices will produce a complement of data last written attempt to read device will produce true data last written to DQ attempt to read device will produce a “ ...
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... DQ 6 Toggle Bit I The MBM29LV800TE/BE also feature the “Toggle Bit I” method to indicate to the host system that the Embedded Algorithms are in progress or completed. During Embedded Program or Erase Algorithm cycle, successive attempts to read (OE toggling) data from the devices will result in DQ toggling between one and zero ...
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... RY/BY Ready/Busy MBM29LV800TE/BE provide a RY/BY open-drain output pin as a way to indicate to the host system that Em- bedded Algorithms are either in progress or has been completed. If output is low, devices are busy with either a program or erase operation. If output is high, devices are ready to accept any read/write or erase operation. ...
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... Byte/Word Configuration BYTE pin selects byte (8-bit) mode or word (16-bit) mode for MBM29LV800TE/BE devices. When this pin is driven high, devices operate in word (16-bit) mode. Data is read and programmed at DQ pin is driven low, devices operates in byte (8-bit) mode. Under this mode, the DQ ...
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... OUT GND 2.0 V for periods ns OE, and RESET pins is 0.5 V. During voltage transitions 9.0 V. Maximum DC input voltage on A Part No. MBM29LV800TE/BE 60 MBM29LV800TE/BE 70/90 MBM29LV800TE/BE 60 MBM29LV800TE/BE 70/90 GND Rating Unit Max 55 125 0 0.5 5.5 V 0.5 13.0 V ...
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... MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT 0.6 V 0.5 V 2.0 V Maximum Undershoot Waveform 2.0 V Maximum Overshoot Waveform 1 14 Note : This wave form is applied for A Maximum Overshoot Waveform 2 MBM29LV800TE/ OE, and RESET. 9 60/70/90 27 ...
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... MBM29LV800TE/BE DC CHARACTERISTICS Parameter Input Leakage Current Output Leakage Current A , OE, RESET Inputs Leakage 9 Current V Active Current * Active Current * Current (Standby Current (Standby, Reset Current CC (Automatic Sleep Mode Input Low Level Input High Level Voltage for Autoselect and Sector ...
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... CE or OE, Whichever Occurs First RESET Pin Low to Read Mode CE to BYTE Switching Low or High * : Test Conditions : Output Load : 1 TTL gate and 30 pF (MBM29LV800TE60/BE60, MBM29LV800TE70/BE70) 1 TTL gate and 100 pF (MBM29LV800TE90/BE90) Input rise and fall times : 5 ns Input pulse levels : 0 3.0 V Timing measurement reference level Input : 1 ...
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... OE Setup Time to WE Active * 2 CE Setup Time to WE Active * 2 Recover Time From RY/BY RESET Pulse Width RESET High Level Period Before Read BYTE Switching Low to Output High-Z 30 60/70/90 MBM29LV800TE/BE Symbol 60 Min Typ Max Min Typ Max Min Typ Max JEDEC Standard AVAV ...
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... Program/Erase Valid to RY/BY Delay Delay Time from Embedded Output Enable Erase Time-out Time Erase Suspend Transition Time *1: Does not include the preprogramming time. *2: For Sector Protection operation. MBM29LV800TE/BE MBM29LV800TE/BE Symbol 60 Min Typ Max Min Typ Max Min Typ Max t 60 FHQV t 90 ...
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... MBM29LV800TE/BE ERASE AND PROGRAMMING PERFORMANCE Parameter Sector Erase Time Byte Programming Time Word Programming Time Chip Programming Time Erase/Program Cycle TSOP (1) , FBGA, CSOP PIN CAPACITANCE Parameter Input Capacitance Output Capacitance Control Pin Capacitance Notes : Test conditions pin capacitance is stipulated by output capacitance. ...
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... TIMING DIAGRAM • Key to Switching Waveforms WAVEFORM Address OEH WE High-Z Outputs Read Operation Timing Diagram MBM29LV800TE/BE INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Change Change from from May Will Change Change from from "H" or "L": ...
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... MBM29LV800TE/BE Address RESET Outputs Hardware Reset/Read Operation Timing Diagram 34 60/70/ Address Stable t ACC High-Z Outputs Valid t OH ...
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... D is the output of the data written to the device. OUT Figure indicates the last two bus cycles out of four bus cycles sequence. These waveforms are for the Alternate WE Controlled Program Operation Timing Diagram MBM29LV800TE/BE Data Polling WHWH1 t ...
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... MBM29LV800TE/BE Address Data Notes : PA is the address of the memory location to be programmed the data to be programmed at word address the output of the complement of the data written to the device the output of the data written to the device. OUT Figure indicates the last two bus cycles out of four bus cycles sequence. ...
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... AAh Data t VCS the sector address for Sector Erase. Addresses Note : These waveforms are for the Chip/Sector Erase Operation Timing Diagram MBM29LV800TE/BE 2AAh 555h 555h 2AAh 55h 80h AAh 555h (Word) for Chip Erase. ...
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... MBM29LV800TE/ Data Data BUSY RY/ Valid Data (The device has completed the Embedded operation Data Polling during Embedded Algorithm Operation Timing Diagram 38 60/70/ OEH WHWH1 or WHWH2 Outputs Flag High Valid Data ...
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... Erase Embedded Suspend Erasing WE Erase Suspend Erase Read Toggle DQ and with read from the erase-suspended sector. 2 MBM29LV800TE/ Toggle DQ Toggle 6 6 Stop Toggling t OE Enter Erase Suspend Program Resume Erase Suspend Erase Suspend Read Program DQ vs. DQ ...
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... MBM29LV800TE/ RY/BY RY/BY Timing Diagram during Program/Erase Operation Timing Diagram WE RESET RY/BY 40 60/70/90 Rising edge of the last WE signal Entire programming or erase operations t BUSY READY RESET, RY/BY Timing Diagram ...
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... Timing Diagram for Word Mode Configuration CE BYTE t ELFL Data Outputs ( FLQZ Timing Diagram for Byte Mode Configuration BYTE BYTE Timing Diagram for Write Operations MBM29LV800TE/ Data Output ( FHQV Data Outputs ( ...
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... MBM29LV800TE/ VLHT VLHT WE CE Data t VCS V CC SPAX : Sector Address to be protected. SPAY : Next Sector Address to be protected. Note : byte mode 60/70/90 SPAX ...
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... VIDR t VCS RESET VLHT RY/BY Temporary Sector Unprotection Timing Diagram MBM29LV800TE/BE Program or Erase Command Sequence Unprotection period 60/70/90 t VLHT t VLHT 43 ...
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... MBM29LV800TE/ VCS VLHT RESET t VIDR Address Data SPAX : Sector Address to be protected SPAY : Next Sector Address to be protected TIME-OUT : Time-Out window Extended Sector Protection Timing Diagram 44 60/70/ SPAX TIME-OUT t WP 60h 60h 150 s (Min) ...
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... FLOW CHART EMBEDDED ALGORITHM Increment Address Notes : The sequence is applied for The addresses differ from Embedded Program MBM29LV800TE/BE Start Write Program Command Sequence (See Below) Data Polling No Verify Data ? Yes No Last Address ? Yes Programming Completed Program Command Sequence (Address/Command) 555h/AAh 2AAh/55h ...
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... MBM29LV800TE/BE EMBEDDED ALGORITHM Chip Erase Command Sequence (Address/Command) Notes : The sequence is applied for The addresses differ from 46 60/70/90 Start Write Erase Command Sequence (See Below) Data Polling Embedded Erase Algorithm No in progress Data FFh ? Yes Erasure Completed Individual Sector/Multiple Sector Erase Command Sequence ...
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... No ( rechecked even if DQ “1” because MBM29LV800TE/BE VA Address for programming Any of the sector addresses within the sector being erased Start during sector erase or multiple erases operation. Read Byte Any of the sector addresses Addr. VA within the sector not being ...
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... MBM29LV800TE/ Read toggle bit twice to determine whether it is toggling Recheck toggle bit because it may stop toggling 60/70/90 Start *1 Read Addr Read Addr Toggle? Yes Yes *1, *2 Read Addr ...
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... Increment PLSCNT No PLSCNT Yes Remove V ID Write Reset Command Device Failed * : byte mode Sector Protection Algorithm MBM29LV800TE/BE Start Setup Sector Addr PLSCNT RESET ...
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... MBM29LV800TE/ All protected sectors are unprotected All previously protected sectors are protected once again. 50 60/70/90 Start RESET Perform Erase or Program Operations RESET V IH Temporary Sector Unprotection Completed *2 Temporary Sector Unprotection Algorithm ...
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... A 6 Read from Sector Address No (Addr PLSCNT 25? Yes Protect Other Remove V from RESET ID Write Reset Command Remove V Write Reset Command Device Failed Sector Protection Extended Sector Protection Algorithm MBM29LV800TE/BE Start V ID Wait Yes ...
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... MBM29LV800TE/BE FAST MODE ALGORITHM Increment Address Notes : The sequence is applied for The addresses differ from Embedded Programming Algorithm for Fast Mode 52 60/70/90 Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling No Verify Data? Yes No Last Address? Yes Programming Completed XXXh/90h XXXh/F0h 16 mode ...
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... ORDERING INFORMATION Part No. MBM29LV800TE60TN MBM29LV800TE70TN MBM29LV800TE90TN MBM29LV800TE60PCV MBM29LV800TE70PCV MBM29LV800TE90PCV MBM29LV800TE60PBT MBM29LV800TE70PBT MBM29LV800TE90PBT MBM29LV800BE60TN MBM29LV800BE70TN MBM29LV800BE90TN MBM29LV800BE60PCV MBM29LV800BE70PCV MBM29LV800BE90PCV MBM29LV800BE60PBT MBM29LV800BE70PBT MBM29LV800BE90PBT MBM29LV800 DEVICE NUMBER/DESCRIPTION MBM29LV800 8 Mega-bit (1 M 3.0 V-only Read, Program, and Erase MBM29LV800TE/BE Package Access Time (ns) 48-pin plastic TSOP (1) (FPT-48P-M19) ...
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... MBM29LV800TE/BE PACKAGE DIMENSIONS Note Values do not include resin protrusion. 48-pin plastic TSOP (1) (FPT-48P-M19) Note 2) Pins width and pins thickness include plating thickness. Note 3) Pins width do not include tie bar cutting remainder. LEAD No. 1 INDEX 24 20.00 (.787 * 18.40 (.724 "A" 0.10(.004) 2003 FUJITSU LIMITED F48029S-c-6-7 ...
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... FUJITSU LIMITED C48056S-c-2-2 C MBM29LV800TE/BE Note Resin protrusion. (Each side : 0.15 (.006) Max) . Note These dimensions do not include resin protrusion. Note 3) Pins width includes plating thickness. Note 4) Pins width do not include tie bar cutting remainder. "A" ...
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... MBM29LV800TE/BE (Continued) 48-ball plastic FBGA (BGA-48P-M20) 8.00 ± 0.20(.315 ± .008) (INDEX AREA) 0.10(.004) 2003 FUJITSU LIMITED B48020S-c-2 60/70/90 +0.12 +.003 1.08 .043 –0.13 –.005 (Mounting height) 0.38 ± 0.10(.015 ± .004) (Stand off) 6.00 ± 0.20 4.00(.157) (.236 ± .008) H Dimensions in mm (inches) . Note : The values in parentheses are reference values. ...
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... MBM29LV800TE/BE FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device ...